Results 231 to 240 of about 100,599 (299)
Epitaxial Growth of Surface Perforations on Parallel Cylinders in Terraced Films of Block Copolymer/Homopolymer Blends. [PDF]
Sun YS +6 more
europepmc +1 more source
Flexible n‐type Bi2Te3 thin films require improved room‐temperature figure of merit (ZT) and mechanical stability. We show that synergistic Bi–Te antisite tuning and crystalline–amorphous hybridization optimizes carrier concentration, mobility, and phonon scattering.
Bo‐Cheng Wang +8 more
wiley +1 more source
CFD modeling and sensitivity‐guided design of silicon filament CVD reactors
Abstract Filament‐based chemical vapor deposition (CVD) for silicon (Si) coatings is often treated as an adaptation of planar deposition. But this overlooks fundamental shifts in transport phenomena and reaction kinetics. In filament CVD, the filament acts as a substrate, heat source, and flow disruptor simultaneously. In this work, we ask: What really
G. P. Gakis +8 more
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Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition. [PDF]
Dhasiyan AK +6 more
europepmc +1 more source
Advancements in Graphdiyne‐Based Multiscale Catalysts for Green Hydrogen Energy Conversion
This review systematically explores the fundamental characteristics of graphdiyne (GDY), cutting‐edge field of GDY‐based multiscale catalysts within sustainable energy conversion systems.Special emphasis is placed on the structure‒property relationships in different reactions.
Qian Xiao, Lu Qi, Siao Chen, Yurui Xue
wiley +1 more source
On the epitaxial growth in ALD Co<sub>3</sub>O<sub>4</sub>- and NiO-based bilayers.
van Limpt RTM +3 more
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Device‐Level Implementation of Reservoir Computing With Memristors
Reservoir computing (RC) is an emerging computing scheme that employs a reservoir and a single readout layer, which can be actualized in the nanoscale with memristors. As a comprehensive overview, the principles of RC and the switching mechanisms of memristors are discussed, followed by actual demonstrations of memristor‐based RC and the remaining ...
Sunbeom Park, Hyojung Kim, Ho Won Jang
wiley +1 more source
The newly developed AI‐automated Fast Fourier Transform denoising algorithm surpasses conventional real‐space methods by revealing even light atoms otherwise hidden in noisy backgrounds. Atomic resolution electron microscopy has become an essential tool for many scientific fields, when direct visualization of atomic arrangements and defects is needed ...
Ivan Pinto‐Huguet +8 more
wiley +1 more source
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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Advanced Materials, 2010A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene ...
Jeongho, Park +8 more
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Surfactants in epitaxial growth
Physical Review Letters, 1989We have investigated the role of surface-active species (surfactants) in heteroepitaxial growth. In general, the growth mode is determined by the balance between surface, interface, and film free energies. Thus, if A wets B, B will not wet A. Any attempt at growing an A/B/A heterostructure must overcome this fundamental obstacle.
, Copel, , Reuter, , Kaxiras, , Tromp
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