Results 231 to 240 of about 88,368 (276)
Rapid homoepitaxial growth of (011) β-Ga<sub>2</sub>O<sub>3</sub> by HCl-based halide vapor phase epitaxy. [PDF]
Sci Technol Adv MaterOshima Y, Oshima T.
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Interfacial Electronic Coupling in Si@SiC@EG Core-Shell Architectures Enables High-Capacity and Long-Life Lithium-Ion Batteries. [PDF]
MoleculesZhao H +9 more
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Interface-to-Surface Transition Induced Topological Hall Effect in 2-Dimensional SrRuO<sub>3</sub> Integrated on Silicon. [PDF]
Research (Wash D C)Wang Q +9 more
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Gallium Nitride for Space Photovoltaics: Properties, Synthesis Methods, Device Architectures and Emerging Market Perspectives. [PDF]
Micromachines (Basel)Drabczyk A +9 more
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Dynamic construction of a durable epitaxial catalytic layer for industrial alkaline water splitting. [PDF]
Nat CommunChang B +17 more
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Surface Engineering, 1987
Atomic layer epitaxy (ALE) is a relatively new and generally poorly understood thin film growth technique which is likely to find application in high technology industries during the next decade. It can be used to grow high quality thin solid films with specific crystal structures or orientations and with very fine control of filn1 thicknesses to one ...
M. Simpson, P. Smith, G. A. Dederski
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Atomic layer epitaxy (ALE) is a relatively new and generally poorly understood thin film growth technique which is likely to find application in high technology industries during the next decade. It can be used to grow high quality thin solid films with specific crystal structures or orientations and with very fine control of filn1 thicknesses to one ...
M. Simpson, P. Smith, G. A. Dederski
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MRS Proceedings, 1990
ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth.
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ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth.
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Thin Solid Films, 1984
This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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Journal of The Electrochemical Society, 1985
Application avec succes (et pour la premiere fois) de la methode d'epitaxie par couche moleculaire a la croissance de couches GaAs en utilisant AsH 3 comme gaz contenant As et le trimethylgallium comme gaz contenant Ga.
Jun‐ichi Nishizawa +2 more
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Application avec succes (et pour la premiere fois) de la methode d'epitaxie par couche moleculaire a la croissance de couches GaAs en utilisant AsH 3 comme gaz contenant As et le trimethylgallium comme gaz contenant Ga.
Jun‐ichi Nishizawa +2 more
openaire +1 more source