Results 251 to 260 of about 28,001 (312)
Interfacial hydrogen incorporation in epitaxial silicon for layer transfer
Applied Surface Science, 2020 International audienceRecently, epitaxial Si layers have attracted strong attention, particularly in photovoltaics. This successful application depends mainly on the easiness of their transfer to a foreign carrier substrate.
Haeyeon Jun +2 more
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Solar Cells, 1986
Abstract Epitaxial layers of CuInSe 2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed.
B. Schumann, A. Tempel, G. Kühn
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Abstract Epitaxial layers of CuInSe 2 and related mixed crystals were grown on different substrates by liquid phase epitaxy and molecular beam epitaxy but mainly by flash evaporation. The geometrical foundations and experimental results are discussed.
B. Schumann, A. Tempel, G. Kühn
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Layer-by-layer sputtering and epitaxy of Si(100)
Physical Review Letters, 1991We report oscillations in diffracted electron intensities during ion bombardment of Si(100) by 200- and 250-eV Xe, both alone and with sequential and simultaneous epitaxy. Analysis of the phase and frequency of the oscillations shows that, to first order, ion bombardment undoes'' previous epitaxy and cancels or partially cancels simultaneous deposition.
, Bedrossian +4 more
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Thin Solid Films, 1984
This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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Journal of The Electrochemical Society, 1985
Application avec succes (et pour la premiere fois) de la methode d'epitaxie par couche moleculaire a la croissance de couches GaAs en utilisant AsH 3 comme gaz contenant As et le trimethylgallium comme gaz contenant Ga.
Jun‐ichi Nishizawa +2 more
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Application avec succes (et pour la premiere fois) de la methode d'epitaxie par couche moleculaire a la croissance de couches GaAs en utilisant AsH 3 comme gaz contenant As et le trimethylgallium comme gaz contenant Ga.
Jun‐ichi Nishizawa +2 more
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Surface Engineering, 1987
Atomic layer epitaxy (ALE) is a relatively new and generally poorly understood thin film growth technique which is likely to find application in high technology industries during the next decade. It can be used to grow high quality thin solid films with specific crystal structures or orientations and with very fine control of filn1 thicknesses to one ...
M. Simpson, P. Smith, G. A. Dederski
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Atomic layer epitaxy (ALE) is a relatively new and generally poorly understood thin film growth technique which is likely to find application in high technology industries during the next decade. It can be used to grow high quality thin solid films with specific crystal structures or orientations and with very fine control of filn1 thicknesses to one ...
M. Simpson, P. Smith, G. A. Dederski
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MRS Proceedings, 1990
ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth.
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ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth.
openaire +2 more sources