Results 261 to 270 of about 28,001 (312)

Atomic layer epitaxy

Journal of Applied Physics, 1986
Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)].
Colin H. L. Goodman, Markus V. Pessa
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Strained Layer Epitaxy

1988
Strained layer epitaxy is a process for the formation of new materials with a strain and composition modulation in the one to one hundred monolayer range. Two aspects of epitaxial growth are discussed in this paper. We first consider the dynamics of the clustering process, a basic limitation in epitaxy, and show that the formation of clusters can be ...
L. C. Feldman, M. Zinke-Allmang, J. Bevk, H.-J. Gossmann   +3 more
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Defects in epitaxial gallium phosphide layers

Physica Status Solidi (a), 1971
X-ray diffraction topography was used to examine cleavage faces of single and double liquid-phase epitaxial layers. Contrast effects at p-n junctions between tellurium-doped n-layers and zinc- and oxygen-doped p-layers are interpreted in terms of an interfacial array of misfit dislocations, which are associated with an ordered array of inclined ...
A. S. Brown, A. J. Springthorpe
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GaAsPBi epitaxial layer grown by molecular beam epitaxy

Semiconductor Science and Technology, 2020
Abstract GaAsPBi is a new class of quaternary III–V compounds that extends the concept of band gap engineering on GaAs with potentials for lattice matching and excellent temperature stability. The alloy has so far been grown only by metalorganic vapor phase epitaxy and this work represents the first epitaxial ...
C Himwas, A Soison, S Kijamnajsuk, T Wongpinij, C Euaraksakul, S Panyakeow, S Kanjanachuchai   +6 more
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Piezoresistive effect in silicon epitaxial layers

Physica Status Solidi (a), 1973
This note are presented some experimental results on piezoresistive properties of p-type-boron doped silicon epitazial layers grown on single-crystal n-type silicon substrates.
F. Conti, MORTEN, Bruno, C. Nobili, A. Taroni   +3 more
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Anisotropic growth and “layer-by-layer” epitaxy

Surface Science, 1989
Abstract It is proposed and justified that systems that grow epitaxially, but in which there is a lateral growth anisotropy, will grow with a smaller interface width than systems in which the growth is isotropic. An example in which this may be true is the growth of Si on Si(100).
Y.-W. Mo, R. Kariotis, D.E. Savage, M.G. Lagally   +3 more
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Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials
The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting prospects for next-generation memory devices. However, the practical implementation, particularly its epitaxial stabilization and a clearer understanding of its ...
Jung Woo Cho, Hyung-Jin Choi, Si-Young Choi   +2 more
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Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2005
ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers.
M. Godlewski, A. Szczerbakow, K. Kopalko, E. Lusakowska, K.S.A. Butcher, E.M. Goldys, T.L. Tansley, A. Barski   +7 more
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Molecular layer epitaxy

Applied Surface Science, 1994
Abstract For the purpose to clarify the process steps and to actualize the low temperature perfect crystal growth technique, photo-excited reactions in halide vapor phase epitaxy (VPE) and in metalorganic CVD (MO-CVD), adsorption and surface reaction processes in molecular layer epitaxy are investigated.
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Atomic layer-by-layer epitaxy of cuprate superconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
A technique for atomic layer-by-layer epitaxy of cuprate superconductors and other complex oxides has been developed at Varian. The samples are engineered by stacking molecular layers of different compounds to assemble multilayers and superlattices, by adding or omitting atomic monolayers to create novel compounds, and by doping within specified atomic
I. Bozovic, J. N. Eckstein, G. F. Virshup   +2 more
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