Results 271 to 280 of about 28,001 (312)

Atomic layer epitaxy

Current Opinion in Solid State and Materials Science, 1998
Abstract Atomic layer epitaxy is now a mature technique offering, through its self-limiting character, distinct advantages for materials processing especially when precise layer thickness control or conformal coating is needed. The technique is well suited for binary compounds and their doping but it is also applicable to more complex thin film ...
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Atomic layer epitaxy of GaAs by chemical beam epitaxy

Journal of Crystal Growth, 1990
Abstract We report a study of atomic layer epitaxy (ALE) using trimethyl-Ga and triethyl-Ga by chemical beam epitaxy. Reflection high energy electron diffraction is employed to monitor the formation of each individual monolayer directly. A limiting mechanism which inhibits the continual adsorption and pyrolysis on a surface saturated with Ga-alkyl is
T.H. Chiu, J.E. Cunningham, A. Robertson, D.L. Malm   +3 more
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Suppression of Intermixing in Strain-Relaxed Epitaxial Layers

Physical Review Letters, 2010
Misfit strain plays a crucial role in semiconductor heteroepitaxy, driving alloy intermixing or the introduction of dislocations. Here we predict a strong coupling between these two modes of strain relaxation, with unexpected consequences. Specifically, strain relaxation by dislocations can suppress intermixing between the heterolayer and the substrate.
Leontiou, Theodoros, Tersoff, Jerry, Kelires, Pantelis C.   +2 more
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Simulations of layer-by-layer sputtering during epitaxy

Applied Physics Letters, 1991
We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high-energy electron diffraction (RHEED) measurements on Si, we observe ion-induced RHEED oscillations, a cancellation of RHEED oscillations during simultaneous equal-rate ion bombardment and growth, and a ...
E. Chason, P. Bedrossian, J. E. Houston, J. Y. Tsao, B. W. Dodson, S. T. Picraux   +5 more
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Layer growth in GaAs epitaxy

Journal of Crystal Growth, 1986
Abstract In GaAs vapor phase epitaxial growth using the Ga-AsCl3-H2 system, it has been found that two-dimensional growth is a dominant process. The lateral growth is direction-dependent and the fastest growth direction is 〈-12l-1〉 on the {111}B facet.
J. Nishizawa, M. Kimura
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Atomic Layer Epitaxy of Silicon

Materials and Manufacturing Processes, 1995
Abstract Two methods are proposed and demonstrated successfully for low temperature atomic layer epitaxy (ALE) of Si, where H atoms play essential roles. The first method is the use of H as a self-limiting factor. Trisilane (Si3H8) was used as source gas and the substrate temperature was modulated in order to alternate steps in an ALE cycle.
Shigeru Imai, Satoru Takagi, Toshio Iizuka, Osamu Sugiura, Masakiyo Matsumura   +4 more
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Defects in epitaxial SiGe-alloy layers

Materials Science and Engineering: B, 2000
Abstract Examples of growth- and process-induced defects in strain-relaxed Si1−xGex alloy layers grown epitaxially on Si substrates are reviewed. Recent efforts to reduce the density of threading dislocations using different types of buffer layers to accommodate the misfit strain are examined, and the optical and electrical activity of growth-induced
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Electrical characterization of epitaxial layers

Thin Solid Films, 1976
Abstract The techniques for determining the concentrations of donors and acceptors in semiconductor samples from Hall effect and resistivity measurements are described, using measurements on GaAs as an example. Analyses of the temperature variation of the carrier concentration and mobility permit the determination of ND and NA in the range 1 × 1012 ...
G.E. Stillman, C.M. Wolfe
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Epitaxial Layer-by-Layer Propagation of a Patterned Surface

Journal of the Korean Physical Society, 2007
The propagation of a patterned surface during epitaxial growth is studied by using kinetic Monte Carlo simulations. Starting with a nanostructured substrate, the pattern re-emerges after every layer, but, as growth proceeds, errors accumulate so that the pattern has a nite lifetime.
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Photoluminescence of GaN epitaxial layers

Journal of Physics C: Solid State Physics, 1982
The characteristic photoluminescence lines in GaN undoped epitaxial layers have been investigated in a large number of samples at low temperature. The lines observed in the high-energy part of the photoluminescence spectra are called I1, I2, I3 and I4 with decreasing photon energy.
R Dai, S Fu, J Xie, G Fan, G Hu, H Schrey, C Klingshirn   +6 more
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