Results 41 to 50 of about 88,368 (276)
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Advanced Functional Materials, EarlyView.Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]
Журнал нано- та електронної фізики, 2011 The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha +3 more
doaj
Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
High‐Throughput Design of Epitaxial Orientation for Functional Thin Films
Advanced Materials InterfacesThe structure and properties of functional thin films are highly sensitive to their epitaxial orientations. However, the orientation of the thin film is typically constrained by that of the substrate, making it challenging to achieve distinct ...
Liyufen Dai +4 more
doaj +1 more source
Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate
Advances in Condensed Matter Physics, 2018 The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field.
Chao Zhang +3 more
doaj +1 more source
Observation of metallic electronic structure in a single-atomic-layer oxide
Nature Communications, 2021 Transition metal oxides exhibit a variety of correlated phases in their bulk form; however, they typically become insulators in the monolayer limit.
Byungmin Sohn +13 more
doaj +1 more source
Fundamental Research, 2023 Perovskite oxides with unique crystal structures and high defect tolerance are promising as atomic surface passivation layers for photoelectrodes for efficient and stable water splitting.
Ning Wei +5 more
doaj +1 more source
Atomic Size Misfit for Electrocatalytic Small Molecule Activation
Advanced Functional Materials, EarlyView.This review explores the application and mechanisms of atomic size misfit in catalysis for small molecule activation, focusing on how structural defects and electronic properties can effectively lower the energy barriers of chemical bonds in molecules like H2O, CO2, and N2.
Ping Hong +3 more
wiley +1 more source
Advanced Materials Interfaces, 2023 In the past 5 years, the transfer of epitaxial oxide thin films has drawn a renewed interest in the scientific community. The major challenge in this technology is to minimize the appearance of extended bulk defects such as plastic deformations, cracks ...
Jordan Bouaziz +4 more
doaj +1 more source
Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy [PDF]
Nano Letters, 2017 Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as newly-developing oxides and chalcogenides, leading to major discoveries in condensed-matter physics.
Masaki Nakano +4 more
openaire +3 more sources