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2020
The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini +2 more
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The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini +2 more
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Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene
Nanotechnology, 2013Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001).
Godel, F. +8 more
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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Advanced Materials, 2010A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene ...
Jeongho, Park +8 more
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IEEE Circuits and Devices Magazine, 1988
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered.
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Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered.
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Thin Solid Films, 1984
This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy
Journal of Crystal Growth, 1999New epitaxial growth techniques based on modulated source supplies such as atomic layer epitaxy (ALE) and migration-enhanced epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees ...
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Selective epitaxial growth by molecular beam epitaxy
Semiconductor Science and Technology, 1993Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
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Molecular beam epitaxy: An emerging epitaxy technology
Thin Solid Films, 1981Abstract The rapid growth of the optoelectronic and microwave industries and their performance requirements have increased the demand for more sophisticated device structures and greater process yields. These demands are being met by increasingly complex thinner epitaxial structures grown from more exotic materials using more sophisticated techniques.
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La Rivista del Nuovo Cimento, 2008
This paper presents a critical discussion of epitaxy when applied to organic molecular materials. Indeed, the possible growth of ordered layers, with known and controlled structural relationships with the substrates, is fundamental both for a deep comprehension of the material properties themselves and for future device applications.
SASSELLA, ADELE +2 more
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This paper presents a critical discussion of epitaxy when applied to organic molecular materials. Indeed, the possible growth of ordered layers, with known and controlled structural relationships with the substrates, is fundamental both for a deep comprehension of the material properties themselves and for future device applications.
SASSELLA, ADELE +2 more
openaire +1 more source