Results 301 to 310 of about 142,351 (345)

Epitaxy

2021
Kumar Shubham, Ankaj Gupta
openaire   +1 more source

Selective epitaxial growth by molecular beam epitaxy

Semiconductor Science and Technology, 1993
Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
openaire   +1 more source

Epitaxy

2022
Roberto Campedelli, Igor Varisco
openaire   +1 more source

Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal

Advanced Materials, 2022
Xiao Wang, Lishu Wu, Austin Marga
exaly  

Epitaxy

Rocks & Minerals, 2006
  +4 more sources

Epitaxy of 2D Materials toward Single Crystals

Advanced Science, 2022
Zhihong Zhang, Kaihui Liu, Rongming Wang   +2 more
exaly  

Epitaxy

2005
L. Miglio, A. Sassella
openaire   +1 more source

Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire

Nano Letters, 2022
Xiaoqi Zheng, Vivek Saraswat, Michael S Arnold   +2 more
exaly  

Epitaxy

2004
Marian A. Herman, Wolfgang Richter, Helmut Sitter   +2 more
openaire   +1 more source

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

Advanced Materials, 2010
Jeongho Park, William C Mitchel, Kurt G Eyink   +2 more
exaly