Results 1 to 10 of about 2,049,776 (246)
A Novel Bidirectional AlGaN/GaN ESD Protection Diode [PDF]
Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs.
Bin Yao +11 more
doaj +3 more sources
Graphene-Based ESD Protection for Future ICs [PDF]
On-chip electrostatic discharge (ESD) protection is required for all integrated circuits (ICs). Conventional on-chip ESD protection relies on in-Si PN junction-based device structures for ESD.
Cheng Li +5 more
doaj +4 more sources
Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment [PDF]
The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures.
Fuxing Li +5 more
doaj +2 more sources
Non-Pad-Based in Situ In-Operando CDM ESD Protection Using Internally Distributed Network
Charged device model (CDM) electrostatic discharge (ESD) protection is an emerging design challenge to ICs at advanced technology nodes. It was recently reported that the traditional pad-based CDM ESD protection methods are fundamentally faulty, which ...
Mengfu Di +3 more
doaj +2 more sources
Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI
This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI ...
Cheng Li +5 more
doaj +2 more sources
A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection [PDF]
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper.
Zeen Han +6 more
doaj +2 more sources
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do +3 more
doaj +2 more sources
Pad-Based CDM ESD Protection Methods Are Faulty
Charged device model (CDM) electrostatic discharge (ESD) protection remains a huge challenge for integrated circuit (IC) reliability designs. The “internal-oriented” CDM model and the “external-oriented” human body model (HBM)
Mengfu Di +3 more
doaj +2 more sources
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET [PDF]
Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
doaj +2 more sources
The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi +5 more
doaj +2 more sources

