Results 21 to 30 of about 2,559 (194)

Enhance the ESD Ability of UHV 300-V Circular LDMOS Components by Embedded SCRs and the Robustness P-Body Well

open access: yesIEEE Journal of the Electron Devices Society, 2021
The ultra-high voltage (UHV) Lateral-diffused MOSFET (LDMOS) transistor has been widely used in power circuit applications and also used as an electrostatic discharge (ESD) self-protection device.
Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan
doaj   +1 more source

SCR-Based ESD Protection Using a Penta-Well for 5 V Applications

open access: yesIEEE Journal of the Electron Devices Society, 2018
This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than low
Bo-Bae Song, Kyoung-Il Do, Yong-Seo Koo
doaj   +1 more source

Microplastics in the menu of Mediterranean zooplankton: Insights from the feeding response of the calanoid copepod Centropages typicus

open access: yesMarine Ecology, EarlyView., 2023
Abstract Microplastic input into the ocean represents an increasing threat to marine biota and may endanger the functioning of marine ecosystems, especially in semi‐enclosed basins, such as the Mediterranean Sea. The size spectrum of microplastics overlaps with that of nano‐microplankton (2–200 μm), thus potentially misleading suspension‐feeding ...
Claudia Traboni   +3 more
wiley   +1 more source

Field-Circuit Co-Simulation Method for Electrostatic Discharge Investigation in Electronic Products

open access: yesIEEE Access, 2021
Electrostatic discharge (ESD) plays an important role in the hard or soft failure of electronic products due to its high voltage, strong electric field, instantaneous high current, and a wide spectrum electromagnetic radiation.
Lanlan Yang   +4 more
doaj   +1 more source

A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application

open access: yesIEEE Journal of the Electron Devices Society, 2019
Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency.
Kyoung-Il Do   +2 more
doaj   +1 more source

Evaluation of Radiation Dose to the Thyroid Gland on Infant Patients Undergoing Anteroposterior Chest X-Ray at a Tertiary Hospital in North-Western Nigeria

open access: yesAfrican Scientific Reports, 2023
The study aims at measuring the entrance surface dose (ESD) of the thyroid gland of infant patients undergoing anterior-posterior (AP) chest x-ray in Usmanu Danfodiyo University Teaching Hospital Sokoto (UDUTHS).
U. Abubakar   +8 more
doaj   +1 more source

Fabrication and performance of a nickel-chromium (NiCr) igniter integrated with TVS diode for ESD protection

open access: yesAIP Advances, 2023
The NiCr igniter is a key element of MEMS-based electro-explosive device (mEED), while electrostatic discharge (ESD) may excite the igniter accidentally. To protect the NiCr igniter from damage by ESD, a novel NiCr igniter by integrating the igniter onto
Wei Liu   +7 more
doaj   +1 more source

Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications

open access: yesIEEE Access, 2023
In this paper, using calibrated 2-D simulations we have reported a new gate grounded trench impact ionization MOS (GGTIMOS) electrostatic discharge (ESD) protection device for sub-2V operating voltage applications.
Avinash Lahgere, Dhruv Shikhar Gupta
doaj   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Return‐To‐Work and Working Status After Surgery for Gastric and Esophageal Cancer: A Prospective Observational Study

open access: yesAnnals of Gastroenterological Surgery, EarlyView.
In this multicenter prospective study of 158 working‐age patients undergoing curative‐intent surgery for gastric or esophageal cancer, 78.5% were working at 18 months. Postoperative appetite loss, financial difficulties, and ≥ 10% weight loss at 6 months were associated with non‐working status.
Kentaro Goto   +18 more
wiley   +1 more source

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