Results 11 to 20 of about 2,524 (188)

ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation

open access: yesIEEE Journal of the Electron Devices Society, 2021
Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di   +3 more
doaj   +1 more source

Non-Pad-Based in Situ In-Operando CDM ESD Protection Using Internally Distributed Network

open access: yesIEEE Journal of the Electron Devices Society, 2021
Charged device model (CDM) electrostatic discharge (ESD) protection is an emerging design challenge to ICs at advanced technology nodes. It was recently reported that the traditional pad-based CDM ESD protection methods are fundamentally faulty, which ...
Mengfu Di   +3 more
doaj   +1 more source

Investigation of CDM ESD Protection Capability Among Power-Rail ESD Clamp Circuits in CMOS ICs With Decoupling Capacitors

open access: yesIEEE Journal of the Electron Devices Society, 2023
The power-rail electrostatic discharge (ESD) clamp circuits have been widely used in CMOS integrated circuits (ICs) to provide effective discharging paths for on-chip ESD protection design. Among all ESD events, the most serious threat is posed to ICs by
Yi-Chun Huang, Ming-Dou Ker
doaj   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

open access: yesCrystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu   +5 more
doaj   +1 more source

Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI

open access: yesIEEE Journal of the Electron Devices Society, 2021
This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI ...
Cheng Li   +5 more
doaj   +1 more source

Pad-Based CDM ESD Protection Methods Are Faulty

open access: yesIEEE Journal of the Electron Devices Society, 2020
Charged device model (CDM) electrostatic discharge (ESD) protection remains a huge challenge for integrated circuit (IC) reliability designs. The “internal-oriented” CDM model and the “external-oriented” human body model (HBM)
Mengfu Di   +3 more
doaj   +1 more source

3D TCAD Analysis Enabling ESD Layout Design Optimization

open access: yesIEEE Journal of the Electron Devices Society, 2020
On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan   +4 more
doaj   +1 more source

A Study of ESD-mmWave-Switch Co-Design of 28GHz Distributed Travelling Wave Switch in 22nm FDSOI for 5G Systems

open access: yesIEEE Journal of the Electron Devices Society, 2021
This paper presents the first co-design analysis of 28GHz broadband single-pole double-throw (SPDT) distributed travelling wave RF switches implemented in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology, featuring 9KV full-chip
Mengfu Di   +5 more
doaj   +1 more source

Design of LDO Regulator With High Reliability ESD Protection Circuit Using Analog Current Switch Structure for 5-V Applications

open access: yesIEEE Access, 2023
The modern electronic device should be able to provide stable voltage and current under a variety of conditions. The LDO regulator used in the electronic device is a system that requires various voltages and load currents.
Sang-Wook Kwon, Yong-Seo Koo
doaj   +1 more source

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

open access: yesIEEE Journal of the Electron Devices Society, 2021
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do   +3 more
doaj   +1 more source

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