Results 101 to 110 of about 67,597,676 (252)
Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han +6 more
wiley +1 more source
On the divisor function in short intervals [PDF]
, 2011 Danilo Bazzanella, Bazzanella, Danilo
core +1 more source
Feynman integrals, hypergeometric functions and nested sums [PDF]
, 2009 Bejdakic E. Feynman integrals, hypergeometric functions and nested sums. Bielefeld (Germany): Bielefeld University; 2009.In this thesis, we present analytical expansion results of some single-mass-scale four-loop vacuum integrals in 3 and 4 dimensions ...
Bejdakic, Ervin
core
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
Advanced Functional Materials, EarlyView.A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Recent estimates on exponential sums in higher dimensions
, 2013 Thesis (M.S.)--American University of Beirut, Department of Mathematics, 2013.Advisor : Dr. Bassam Shayya, Professor, Department of Mathematics--Committee Members : Dr. Michel Egeileh, Assisatnt Professor, Department of Mathematics ; Dr.
El-Wali, Sara Mohamad.
core
Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe
Advanced Functional Materials, EarlyView.By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta +11 more
wiley +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures
Advanced Functional Materials, EarlyView.In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash +6 more
wiley +1 more source