Results 121 to 130 of about 332,589 (274)
Advanced Functional Materials, EarlyView.A Si anode comprising entangled networks of cellulose and SWCNT (C‐CNT) nanocomposites as an anode electrode for a high‐performance LIB is realized by fully utilizing the generated microstructure of a novel conductive 3D scaffold via a low‐temperature and eco‐friendly process. Additionally, localized heating via photo‐thermal conversion can be utilized
Boeun Ryu +5 more
wiley +1 more source
MicromachinesDetecting subsurface defects in optical components has always been challenging. This study utilizes laser scattering and photothermal weak absorption techniques to detect surface and subsurface nano-damage precursors of single-crystal silicon components.
Wei Li +5 more
doaj +1 more source
Through Diamond Robust Surface Enhanced Raman Spectroscopy
Advanced Functional Materials, EarlyView.Thin film diamond growth offers a unique opportunity for Surface Enhanced Raman Spectroscopy (SERS); the encapsulation of plasmonic nanostructures within a transparent, chemically stable, and physically robust coating. The diamond acts as both a window and protective layer, enabling illumination of the plasmonic nanostructures through the diamond ...
Kieran N. Twaddle +4 more
wiley +1 more source
Domain Wall Rebounds Driven by Competing Entropic and Spin‐Transfer Torques in Cylindrical Nanowires
Advanced Functional Materials, EarlyView.Domain‐wall motion in cylindrical magnetic nanowires driven by nanosecond current pulses. Low current densities efficiently displace domain walls, whereas higher currents cause rebound at the wire ends. The effect results from the interplay between spin‐transfer torque and thermally induced processes, highlighting the role of thermal gradients in ...
Elias Saugar +11 more
wiley +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Advanced Functional Materials, EarlyView.Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Materials exist that are useful for gamma scintillation, radiation shielding, neutron‐gamma pulse shape discrimination (PSD), thermal neutron detection, or high refractive index applications. While certain materials have exhibited optimal performance for each of these applications, none achieve multiple functions.
Isabelle Winardi +13 more
wiley +1 more source
Advanced Functional Materials, EarlyView.ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk +10 more
wiley +1 more source
Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites
Advanced Functional Materials, EarlyView.Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles +16 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda +11 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source