Results 81 to 90 of about 529,742 (380)

Mechanical Behavior and Microstructural Changes Associated with Tensile Deformation above the Martensite Start Temperature during Quenching and Subsequent Partitioning of a Low‐Alloy 37SiB6 Steel

open access: yesAdvanced Engineering Materials, EarlyView.
A new experimental setup, incorporating digital image correlation and infrared thermography in combination with inductive‐conductive heating for precise temperature control, is used to analyze the mechanical behavior and microstructural changes of sheet metal under complex thermomechanical test conditions that represent quench and partitioning ...
Christian Illgen   +4 more
wiley   +1 more source

Improved photoetching fabrication method [PDF]

open access: yes, 1972
Photoetching method producing well-defined lines with minimum undercutting was developed for etching coolant passages in nickel sheet. Phosphate coating is applied over conventional silver plate maskant and phosphoric acid solution is used to remove ...
Kistler, C. L.
core   +1 more source

Controlling the Intrinsic Josephson Junction Number in a $\mathbf{Bi_2Sr_2CaCu_2O_{8+\delta}}$ Mesa

open access: yes, 2004
In fabricating $\mathrm{Bi_2Sr_2CaCu_2O_{8+\delta}}$ intrinsic Josephson junctions in 4-terminal mesa structures, we modify the conventional fabrication process by markedly reducing the etching rates of argon ion milling. As a result, the junction number
Ji, Zheng-Ming   +4 more
core   +2 more sources

Etching & Etchers

open access: yes, 2016
Includes index. ; Each plate accompanied by leaf with descriptive letterpress in red. ; Mode of access: Internet.
openaire   +1 more source

Anisotropic etching of β-Ga2O3 using hot phosphoric acid

open access: yesApplied Physics Letters, 2019
We report a systematic investigation on the anisotropic etching behavior of β-Ga2O3. A wagon wheel pattern was designed and fabricated on (010)-oriented β-Ga2O3 substrates.
Yuewei Zhang, Akhil Mauze, J. Speck
semanticscholar   +1 more source

High‐Temperature Oxidation of the CrFeNi Medium‐Entropy Alloy

open access: yesAdvanced Engineering Materials, EarlyView.
The oxidation behavior of equiatomic CrFeNi MEA is a key issue that determines this material's suitability for high‐temperature application. The understanding of long‐term behavior is even more crucial than short‐term corrosion effects. The alloy is exposed to synthetic air at 1000, 1050, and 1100 °C for 24, 100, and 1000 h and systematically compared ...
Anna Maria Manzoni   +5 more
wiley   +1 more source

Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. [PDF]

open access: yes, 2006
Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching.
Driessen, A.   +3 more
core   +1 more source

Residual Stress States in Microstructurally Graded PBF–LB/M Austenitic Steel Components

open access: yesAdvanced Engineering Materials, EarlyView.
This study examines microstructurally graded 316L rectangular tube profiles fabricated via PBF–LB/M using a dual‐laser system. A 1 kW top‐hat and a 400 W Gaussian laser create distinct grain sizes and crystallographic texture. Mechanical properties are linked to microstructural evolution driven by processing conditions.
Nico Möller   +5 more
wiley   +1 more source

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

open access: yesMicromachines
Detecting subsurface defects in optical components has always been challenging. This study utilizes laser scattering and photothermal weak absorption techniques to detect surface and subsurface nano-damage precursors of single-crystal silicon components.
Wei Li   +5 more
doaj   +1 more source

Re-entrant Layer-by-Layer Etching of GaAs(001)

open access: yes, 1995
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high ...
B. A. Joyce   +25 more
core   +1 more source

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