Results 161 to 170 of about 923 (213)
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A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
Japanese Journal of Applied Physics, 1988Some etching characteristics for GaAs and InP with Cl2 gas using a reactive ion beam etching (RIBE) system have been studied. The employed etching gas was ionized by electron cyclotron resonance (ECR) at a gas pressure of about 6×10-4 Torr; the applied microwave power was 300 W. The etch rate was measured as a function of the substrate temperature
Takashi Tadokoro +2 more
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The influence of etching parameters on the sensitivity of plastics
Radiation Effects, 1970Abstract It seems that the critical rate of primary ionization for track registration must also depend on the etching conditions. Simple experimental methods are presented to show a possible change in registration sensitivity as a function of the chemical parameters.
G. Somogyi, M. Várnagy, L. Medveczky
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Parameter Investigation of Nano-Sized Etching in an ICP Silicon Etching System
2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions.
S.C. Chen +4 more
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The influence of etching parameters on the morphology of dislocation etch pits in NaCl crystals
Journal of Crystal Growth, 1970Abstract The influence of etching parameters such as undersaturation, stirring, temperature and KI concentration of the etchant on the morphology of etch pits is studied.
V. Hari Babu, K.G. Bansigir
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Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage
Applied Physics Letters, 1997The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spectra study of GaAs/InGaAs/GaAs heterostructures with near surface quantum wells. It was shown that the change of normal ion incidence to oblique and the decrease of the sample temperature to that of liquid nitrogen
T. B. Borzenko +3 more
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Nanotechnology, 2008
In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution,
Matthew G, Lassiter, Philip D, Rack
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In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution,
Matthew G, Lassiter, Philip D, Rack
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Influence of Electrochemical Parameters on the Etching of Macropores in Silicon
Theoretical and Experimental Chemistry, 2003The process of formation of macropores in silicon with stationary irradiation and a constant current density during the electrochemical process in dependence on the initial bias on the silicon anode, U 0, has been studied. Stable formation of macropores began when the bias reached U c, corresponding to a critical concentration of holes p c at the ...
L. A. Karachevtseva +2 more
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Effect of etching parameters on the electrochemical response of silicon nanowires
Journal of Applied Electrochemistry, 2021Silicon nanowires combine a high electrical conductivity with low thermal conductivity due to the small cross section offering a good template for sensing. Silicon p-type (100) substrate was used in this work to present a comparative study from a morphological point of view as well as for the electrical properties of silicon nanowires (SiNWs) etched by
Fatma Zaïbi +5 more
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Dimensionless parameters of reactive ion etching
Proceedings., 39th Electronic Components Conference, 2003The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
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From atomic parameters to anisotropic etching diagrams
Materials Science and Engineering: B, 1996Abstract A Monte Carlo program and a program based on the formula of the evolution of atom disappearance probabilities were used for the simulation of anisotropic etching of silicon-like crystal dots containing several thousands of atoms. An additional program extracts the local values of the etching rates and represents them in polar diagrams.
N. Moldovan, Mihaela Ilie
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