Engineering Surface Chemistry to Enhance Ferroelectric Phase Formation in Ultrathin PVDF-TrFE Films. [PDF]
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Electron Channeling Contrast Imaging of Ferroelastic Domains. [PDF]
Peng W +13 more
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Ultrahigh energy storage density and efficiency in AgNbO<sub>3</sub>-based ceramics by percolating interaction between antipolar regions and defect pairs. [PDF]
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A-site dependent metastable polar phases from polarization compatible octahedral rotations in perovskite AZrO<sub>3</sub> (A = Ca, Sr). [PDF]
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Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]
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Enhanced production of active species and NH<sub>3</sub> using non-equilibrium ferroelectric barrier discharge. [PDF]
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In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme ...
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