Results 61 to 70 of about 115,553 (174)
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
, 2017 The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A. +10 more
core +1 more source
In-plane ferroelectric tunnel junctions based on 2D α-In2Se3/semiconductor heterostructures
npj Computational Materials, 2023 Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α-In2Se3 was found to exhibit robust in-plane and out-of-plane ferroelectric polarizations at a monolayer thickness, which is ...
Zifang Liu +5 more
doaj +1 more source
Theory of PbTiO3, BaTiO3, and SrTiO3 Surfaces
, 1999 First-principles total-energy calculations are carried out for (001) surfaces of the cubic perovskite ATiO3 compounds PbTiO3, BaTiO3, and SrTiO3. Both AO-terminated and TiO2-terminated surfaces are considered, and fully-relaxed atomic configurations are ...
Meyer, B. +2 more
core +2 more sources
High frequency polarization switching of a thin ferroelectric film
, 2010 We consider both experimentally and analytically the transient oscillatory process that arises when a rapid change in voltage is applied to a $Ba_xSr_{1-x}TiO_3$ ferroelectric thin film deposited on an $Mg0$ substrate. High frequency ($\approx 10^{8} rad/
A. F. Devonshire +12 more
core +1 more source
Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7
, 2019 Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization.
Autieri, Carmine +3 more
core +1 more source
Characterization of highly-oriented ferroelectric Pb_xBa_(1-x)TiO_3 [PDF]
, 2005 Pb_xBa_(1-x)TiO_3 (0.2 ≾ x ≾ 1) thin films were deposited on single-crystal MgO as well as amorphous Si_3N_4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD).
Boyd, David A. +2 more
core
Ferroelectricity in ultra-thin perovskite films
, 2005 We report studies of ferroelectricity in ultra-thin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 \AA thick with polarization normal to the surface.
Alexie M. Kolpak +3 more
core +1 more source
Tuning of the depolarization field and nanodomain structure in ferroelectric thin films
, 2014 The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films.
Fernandez-Pena, Stéphanie +4 more
core +2 more sources
Passive Voltage Amplification in FE-FE-DE Heterostructure
IEEE AccessIn this article, we have studied passive voltage amplification in FE-FE-DE heterostructure. We have stacked two different ferroelectric oxides; one is second-order transition ferroelectric material (continuous transition ferroelectric material) and the ...
Bhaskar Awadhiya +5 more
doaj +1 more source
AIP Advances, 2020 Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha +7 more
doaj +1 more source