Results 81 to 90 of about 115,553 (174)

Ferroelectric domain structures of PbTiO3 thin films with imprinted ferroelectric hysteresis loops

Scientific Reports
Understanding and controlling the domain structures and their stability in ferroelectric thin films is crucial for advancing technologies such as energy storage, memory devices, and sensors.
Eunmi Lee, Ahmed I. Ali, A. B. El Basaty, Jong Yeog Son   +3 more
doaj   +1 more source

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

Nature Communications
The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3.
Yuyang Wu, Tianjiao Zhang, Deping Guo, Bicheng Li, Ke Pei, Wenbin You, Yiqian Du, Wanchen Xing, Yuxiang Lai, Wei Ji, Yuda Zhao, Renchao Che   +11 more
doaj   +1 more source

Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration

Nature Communications
Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in ferroelectric transistors and nonvolatile memory.
Yu Liu, Shuzhang Yang, Lina Hua, Xiaomin Yang, Enlong Li, Jincheng Wen, Yanqiu Wu, Liping Zhu, Yingguo Yang, Yan Zhao, Zhenghua An, Junhao Chu, Wenwu Li   +12 more
doaj   +1 more source

Physical origin of hafnium-based ferroelectricity

Computational Materials Today
This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements ...
Shuning Lv, Tengfei Cao, Zihe Wang, Tingxiao Xie, Shuang Gao, Gilberto Teobaldi, Qi Hu, Li-Min Liu   +7 more
doaj   +1 more source

An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect

Advanced Science
The phenomenon of ferroelectric imprint, characterized by an asymmetric polarization switching behavior, poses significant challenges in the reliability and performance of ultra‐low‐voltage ferroelectric devices, including MagnetoElectric Spin‐Orbit ...
Yu‐Wei Chen, Tung‐Yuan Yu, Chun‐Wei Huang, Tzu‐Hsuan Yu, Yung‐Chi Su, Chao‐Rung Chen, Wei‐Chen Hung, Pei‐Yin Chang, Bhagwati Prasad, Yu‐Chuan Lin, Ramamoorthy Ramesh, Yen‐Lin Huang   +11 more
doaj   +1 more source

Effects of plasma gas interface processing on ferroelectric property of TiN/Hf0.5Zr0.5O2/TiN ferroelectric device

High Temperature Materials and Processes
HZO ferroelectric capacitor device have sparked considerable interest among researchers due to their high-speed storage capability and low-power consumption characteristics.
Wang Zhenhua, Hou Jingwen, Li Zewen, Wang Yuchan, Wang Fang, Zhang Bao, Li QianHui, Xu ChuHeng, Gong Xin, Wang Qi, Han Yemei, Hu Kai, Zhang Kailiang   +12 more
doaj   +1 more source

Thermodynamic Properties, Structural Characteristics, and Cation Dynamics of Perovskite-Type Layer Crystal [NH3(CH2)2NH3]ZnCl4

ACS Omega, 2020
Ae Ran Lim
doaj   +1 more source

Ferroelectric nanodot reservoir for neuromorphic computing. [PDF]

Beilstein J Nanotechnol
Razumnaya A, Tikhonov Y, Naidenko D, Boron L, Vinokur V, Lukyanchuk I.   +5 more
europepmc   +1 more source

High-Performance Differential Imaging via Reconfigurable Black Phosphorus p-n Homojunction Optoelectronics. [PDF]

Nanomicro Lett
Hao R, Luo L, Yang L, Yang X, Gao F, Zhu M, Li Y, Feng Q, Zhang Z.   +8 more
europepmc   +1 more source

Chemo-Strain Valence Engineering for Boosting Photovoltaic Response in Double Perovskite Epitaxial Films. [PDF]

Nanomicro Lett
Wu Y, Tu J, Xia J, Liu X, Shi L, Li H, Li M, Chen P, Yang Q, Du S, Song P, Li H, Zhan Q, Li X, Tian J, Zhang L.   +15 more
europepmc   +1 more source