Results 141 to 150 of about 9,032,815 (373)

Stress modulation of hafnium-based ferroelectric material orientation in 3D cylindrical capacitor

open access: yesAIP Advances
Hafnium-based ferroelectric materials have attracted a lot of attention, but the distributions of the materials need to be tuned for commercialization, including phase distribution and polarization orientation distribution.
Wenqi Li   +7 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

Artificial Intelligence‐Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

open access: yesAdvanced Materials, EarlyView.
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll   +19 more
wiley   +1 more source

Artificial intelligence-driven phase stability evaluation and new dopants identification of hafnium oxide-based ferroelectric materials

open access: yesnpj Computational Materials
In this work, a multi-stage material design framework combining machine learning techniques with density functional theory is established to reveal the mechanism of phase stabilization in HfO2 based ferroelectric materials.
Shaoan Yan   +13 more
doaj   +1 more source

Light‐Driven Reconfigurable Logic in a Monolithic Perovskite Device via Nonlinear Photoresponse Switching

open access: yesAdvanced Materials, EarlyView.
This study demonstrates a monolithic perovskite OELG device that performs all eight logic operations, including XOR and XNOR, without external bias. Enabled by trap‐engineered MAPbI3:PLL and dual photogates, it achieves reconfigurable logic and parallel decoding of amplitude–frequency signals, supporting scenario‐configured logic‐level separation for ...
Dante Ahn   +13 more
wiley   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

open access: yesAdvanced Electronic Materials
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies.
David Lehninger   +8 more
doaj   +1 more source

Mathematical analysis of the dynamics of solitary wave solutions to the time-fractional thin-film ferroelectric materials model

open access: yesResults in Physics
The thin-film ferroelectric materials equation is a fundamental mathematical model to explain the behavior of polarized electric fields in ferroelectric materials possessing unique properties such as piezoelectricity, pyroelectricity, electrostriction ...
M. Ali Akbar   +2 more
doaj   +1 more source

Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon‐Enhanced Sum‐Frequency Microscopy

open access: yesAdvanced Materials, EarlyView.
A nonlinear optical microscopy technique is introduced that enables rapid imaging of hexagonal boron nitride monolayers, which are usually optically invisible. The nonlinear mixing of mid‐infrared and visible laser pulses enables full crystallographic imaging through phase‐resolved sum‐frequency generation microscopy, where the resonant excitation of a
Niclas S. Mueller   +15 more
wiley   +1 more source

Chip‐Scale Graphene/IGZO Cold Source FET Array Enabling Sub‐60 mV dec−1 Super‐Steep Subthreshold Swing

open access: yesAdvanced Materials, EarlyView.
Super‐steep subthreshold swing (SS) below 60 mV dec−1 is demonstrated in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppressed the Boltzmann thermal tail, while high‐k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is
Seyoung Oh   +13 more
wiley   +1 more source

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