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Advances in ab-initio theory of Multiferroics. Materials and mechanisms: modelling and understanding
Within the broad class of multiferroics (compounds showing a coexistence of magnetism and ferroelectricity), we focus on the subclass of "improper electronic ferroelectrics", i.e.
A. Girlando+204 more
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Ferroelectric Electron Holography [PDF]
Ferroelectrics are increasingly important as materials in semiconductor technology, e.g. for building non-volatile memory chips. For optimisation of the properties of such devices, there is an urgent need for methods, which analyse the ferroelectric properties at nanometer scale. Furthermore, the basic understanding of the interaction of ferroelectrics
Michael Lehmann+3 more
openaire +4 more sources
The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati+7 more
wiley +1 more source
Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices
LaNiO$_{3}$-BaTiO$_{3}$ superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO$_2$)$^-$/(BaO)$^0$ interfaces is enhanced from ...
Cai, Tian-Yi+3 more
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This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye+6 more
wiley +1 more source
Pressure-Temperature Phase Diagram of Multiferroic $Ni_3V_2O_8$
The pressure-temperature phase diagram of multiferroic $Ni_3V_2O_8$ is investigated for hydrostatic pressures up to 2 GPa. The stability range of the ferroelectric phase associated with the incommensurate helical spin order is reduced by pressure and ...
B. Lorenz+7 more
core +1 more source
A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors
Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr+7 more
wiley +1 more source
Large electron-electron Coulomb-interactions in correlated systems can lead to a periodic arrangement of localized electrons, the so called "charge-order".
Picozzi, Silvia, Yamauchi, Kunihiko
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Ferroelectrics at the nanoscale [PDF]
AbstractThere are several factors which make the investigation and understanding of nanoscale ferroelectrics particularly timely and important. Firstly, there is a market pressure, primarily from the electronics industry, to integrate ferroelectrics into devices with progressive decreases in size and increases in morphological complexity.
openaire +3 more sources
A new alloy‐oxide vertically aligned nanocomposite (VAN) thin film with two immiscible non‐noble metal elements of Co and Cu embedded in BaTiO3 (BTO) matrix is designed and fabricated, which presents interesting magnetic, ferroelectric, and optical properties.
Jijie Huang+7 more
wiley +1 more source