Results 101 to 110 of about 7,998,069 (280)

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

open access: yesAdvanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris   +7 more
wiley   +1 more source

Designing With Field Programmable Gate Arrays

open access: yes, 1995
The approaches used in the design of digital systems depend very much on the complexity of the design. This paper looks at the advantages and tradeoffs of designing with Field Programmable Gate Arrays versus other design approaches in particular in a ...
Coowar, Rosida
core  

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

A Field Programmable Gate Array‐Assisted Optoelectronic Emulator for Photonic Neuromorphic Computing

open access: yesAdvanced Intelligent Systems
As the pace of complementary metal oxide semiconductor (CMOS) scaling slows down and Moore's law approaches its limit, optoelectronics has emerged as a promising solution for next‐generation computing hardware. Optoelectronic systems are appealing due to
Jinxian Li   +5 more
doaj   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

The NASA Electronic Parts and Packaging (NEPP) Program - Field Programmable Gate Array (FPGA) Tasks/Considerations [PDF]

open access: yes, 2014
This presentation includes NASA Electronic Parts and Packaging (NEPP) Program Field Programmable Gate Array (FPGA) considerations and FPGA radiation tasks ...
LaBel, Kenneth A.
core  

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

open access: yesAdvanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee   +9 more
wiley   +1 more source

Comprehensive Review on the Exploitation of Advanced Memory Optimization Strategies to Improve Performance for Convolutional and Spiking Neural Networks in Medical Imaging Using Hardware Accelerators

open access: yesIEEE Access
Advanced memory optimization techniques are reviewed to enhance the performance of Convolutional Neural Networks (CNNs) and Spiking Neural Networks (SNNs) on hardware accelerators, addressing the real-world challenges in medical imaging.
N. Srikanth Prasad, S. Sundar
doaj   +1 more source

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