Results 231 to 240 of about 6,943 (308)

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

open access: yesAdvanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang   +9 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

open access: yesAdvanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren   +8 more
wiley   +1 more source

Infrared Machine Vision System Based on Te NWs‐Au NPs Plasmonic Optoelectronic Memristor for Motion Detection

open access: yesAdvanced Science, EarlyView.
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian   +7 more
wiley   +1 more source

Delocalized Charge Transport in Thermoelectric Composites of Semiconducting Carbon Nanotubes Wrapped with a P‐Type Polymer

open access: yesAdvanced Electronic Materials, EarlyView.
Composites made of semiconducting carbon nanotubes and p‐type polymers, when adequately doped with molecular dopants, can exhibit highly delocalized charge carrier transport, showing high thermoelectric performances. The efficient charge delocalization is enabled by the reduced coulombic binding energy at high carrier concentration and the small ...
Ye Liu   +7 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

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