Results 121 to 130 of about 11,328 (210)

Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. [PDF]

Sci Rep
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N.   +21 more
europepmc   +2 more sources

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Design of low power and high speed approximate multipliers utilizing current mode 4 to 2 compressors based on CNTFET technology. [PDF]

Sci Rep
Foroutan P, Navi K.
europepmc   +1 more source

Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications. [PDF]

Micromachines (Basel)
Karimi K, Fardoost A, Javanmard M.
europepmc   +1 more source

High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. [PDF]

Sci Rep
Oh K, Kim H, Kim Y, Yoo H, Choi M, Maeng W, Kim S, Lee HJ, Baek CK.   +8 more
europepmc   +1 more source

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node. [PDF]

Sci Rep, 2023
Liu B, Zhu J.
europepmc   +1 more source

Silicon Nanowire FinFETs

, 2012
C. Mukherjee, C. K.
openaire   +4 more sources

Optimized low power hybrid adder architecture for OFDM in wireless communication. [PDF]

Sci Rep
Devi TK, Priyanka EB, Anand R, Bhavana GB, Sakthivel P, Thangavel S, Khan B, Jeyanthi K.   +7 more
europepmc   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]

Micromachines (Basel)
Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A.   +5 more
europepmc   +1 more source