Results 101 to 110 of about 7,054 (167)
Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit
Micromachines, 2017 Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices.
Ke Han +3 more
doaj +1 more source
FinFET standard cell optimization for performance and manufacturability [PDF]
, 2012 As Moore's law continues to 20nm and below, traditional CMOS device faces severe short channel effects. Industry is switching from traditional CMOS to FinFET in order to keep Moore's law alive.
Zhang, Boyang, 1988-
core +2 more sources
Analysis of high-frequency characteristics of FinFET structures for communication circuits
, 2014 Usporedba FinFET-a s klasičnim i SOI MOSFET-om. Strukture i procesi proizvodnje modernih FinFET-a. Definicija struktura FinFET-a s litografskim dimenzijama manjim od 50 nm.
Prgić, Hrvoje
core
, 2018 The optimal position of dislocation stress memorization technique (DSMT) to maximize n-FinFET performance as well as the stacking fault (SF) number, [Ge] concentration limit and p-FinFET DC tradeoff in eSiGe are newly investigated by using the scanning ...
Min, Jeong Guk +13 more
core +1 more source
Introduction de la technologie FinFET 7-nm dans Microwind
, 2017 This paper describes the implementation of a high performance FinFET-based 7-nm CMOS Technology in Microwind. Basic concepts related to the design of FinFET and design for manufacturing are also described.
Sicard, Etienne
core +1 more source
Fringing gate capacitance model for Triple-Gate FinFET
, 2013 In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on threedimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas.
Martinez-Lopez, A. G. +5 more
core
Analysis of IG FINFET based N-Bit Barrel Shifter [PDF]
, 2020 This paper presents a new energy efficient N-bit barrel shifter using IG FinFET in 20 nm technology. The independent gate based FinFET device having more attractive features than standard CMOS technology.
Kumar, Praneeth +3 more
core
Introduction de la technologie 10-nm FinFET Dans Microwind
, 2017 This paper describes the implementation of a high performance FinFET-based 10-nm CMOS Technology in the educational tool Microwind. New concepts related to the design of FinFET and design for manufacturing are also described.
Sicard, Etienne
core +1 more source
AI-Assisted Design of Drain-Extended FinFET With Stepped Field Plate for Multi-Purpose Applications
IEEE Journal of the Electron Devices SocietyFin Field-Effect-Transistor (FinFET) has become fundamental components in advanced integrated circuit, while the drain-extended FinFET (DE-FinFET) features a lightly doped drain extension region to improve the device’s breakdown voltage.
Xiaoyun Huang +7 more
doaj +1 more source
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures
, 2009 This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover,
C. RUSS +9 more
core