Results 91 to 100 of about 7,054 (167)

Molecular Design Toward High‐Performance Solution‐Processable Push–Pull Zinc(II) Porphyrin‐Based Resistive Memory Devices: From Binary to Ternary Memory Behavior

Small Science, Volume 6, Issue 5, May 2026.
A series of zinc(II) porphyrin‐based D−A complexes is employed to fabricate solution‐processable resistive memory devices. The utilization of an electron‐donating π‐bridge or a weak electron‐donating moiety is able to turn on an extra resistive state to realize ternary memory performance, demonstrating the relationship between memory behavior and ...
Ka Wai Kwong, Hing Chan, Ming‐Yi Leung, Eugene Yau‐Hin Hong, Shiu‐Lun Lai, Vivian Wing‐Wah Yam   +5 more
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, Volume 38, Issue 21, 13 April 2026.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source

A Model of Threshold Voltage in FinFET

, 2011
A physics-based threshold voltage model is proposed, according to the electrostatics distribution in Si body of FinFET which is obtained by 2-D numerical simulation.
X.H. Zhang, Jian Liu, Li Li
core   +1 more source

PERFORMANCE COMPARISON OF BULK FINFET WITH SOI FINFET IN NANO-SCALE REGIME [PDF]

, 2013
This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper
TRIPATHI, SUMANLATA, SANDEEP MISHRA, R.A. MISHRA, RAMANUJ MISHRA, SUMANLATA TRIPATHI, VIRENDRA PRATAP YADAV   +5 more
core   +1 more source

Comparative Study on RTN Amplitude in Planar and FinFET Devices

, 2017
In this paper, the amplitude of random telegraph noise (RTN) in FinFET is studied, comparing with RTN in planar devices. The impacts of intrinsic characteristics in FinFET (channel non-uniformity and quantum confinement) on its RTN amplitude are ...
Asenov, Asen, Zexuan Zhang, Asen Asenov, Shaofeng Guo, Zhang, Zexuan, Guo, Shaofeng, Zhang, Zhe, Wang, Runsheng, Runsheng Wang, Cheng, Binjie, Ru Huang, Binjie Cheng, Xingsheng Wang, Wang, Xingsheng, Zhe Zhang, Huang, Ru   +15 more
core   +1 more source

Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits

Engineering Reports
As technological nodes are scaled down to the nanoscale, power consumption emerges as a critical challenge in complementary metal‐oxide‐semiconductor (CMOS) technology.
Pillem Ramesh, Atul S. M. Tripathi
doaj   +1 more source

Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices

Engineering and Applied Science Research, 2022
This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah, Geeta Nijhawan, Imran Ahmed Khan   +2 more
doaj  

A New Extended Body FinFET for 1T-DRAM Application

, 2014
In this paper, we propose a new extended body FinFET (EB-FinFET) for one transistor dynamic random access memory (1T-DRAM) application. As the device scales down, 1T-DRAM faces the challenge of an insufficient storage region.
Chang, Cheng-Hsien
core  

Performance and Leakage Optimization with 22nm Bi-level FinFET

, 2014
In this paper, we analyze on- and off-current characteristic of the 22-nm Bi-level FinFET in which two different fin widths are formed. From the 3D Technology CAD (TCAD) simulations, we find out that the narrower the fin width the lower the leakage ...
Jaemin Lee, Lee, Jaemin, Kim, Youngmin, Youngmin Kim   +3 more
core   +1 more source

Design of a Low-Area, Low-Power and High-Speed Comparator in 65 nm FinFET Technology

مهندسی مخابرات جنوب
In the present study, a new low-power and high-speed comparator circuit is designed in 65 nm fin field-effect transistor (FinFET) technology. Moreover, by properly using the capabilities of FinFET technology, the number of transistors is reduced, and ...
Navid Sabzevari, Mohammad Reza Yousefi, S. Mohammadali Zanjani   +2 more
doaj