Results 71 to 80 of about 7,054 (167)
Triple-Node FinFET with Non-Ohmic Schottky Junctions for Synaptic Devices
, 2023 A triple-node FinFET (TriNo-FinFET) with non-ohmic Schottky junctions is demonstrated for an artificial synapse. The three mechanisms of thermionic emission in a subthreshold region, tunneling in a transition region, and drift transport in an inversion ...
Kim, Jin-Ki +6 more
core +1 more source
Sensors, 2020 Wireless Capsule Endoscopy is a state-of-the-art technology for medical diagnoses of gastrointestinal diseases. The amount of data produced by an endoscopic capsule camera is huge.
Ioannis Intzes +2 more
doaj +1 more source
Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi +3 more
wiley +1 more source
IET Circuits, Devices and SystemsThe geometrical parameters of the fin-shaped field-effect transistor (FinFET) significantly affect the outcomes of the FinFET-based designs. Various machine learning (ML) schemes have been presented to optimize the geometrical parameters of the FinFET ...
Vijayalaxmi Kumbar, Manisha Waje
doaj +1 more source
Фізика і хімія твердого тілаРозвиток сучасної електроніки ґрунтується на впровадженні сучасних мікро- та наноелектронних технологій. Традиційні комплементарні метал-оксид-напівпровідникові (КМОН) планарні транзисторні структури на основі масивного кремнію поступово поступаються ...
I. Kohut, O. Samarchuk
doaj +1 more source
Carrier Mobility Enhancement in Two‐Dimensional Semiconductor
Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo +6 more
wiley +1 more source
FinFET to GAA MBCFET: A Review and Insights
IEEE AccessThis review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures.
Rinku Rani Das +2 more
doaj +1 more source
Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices [PDF]
EPJ Web of ConferencesThis article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET.
Datta Emona, Basu Arnab, Paul Sayan
doaj +1 more source
Design of Ternary Content-Addressable Memories with Dynamically Power-gated Storage Cells Using FinFETs [PDF]
Electronics, 2016 An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count.
Meng-Chou Chang +2 more
doaj +1 more source
The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian +6 more
wiley +1 more source