Results 71 to 80 of about 451 (114)
Some of the next articles are maybe not open access.
ECS Transactions, 2007
A FinFET device was simulated using recursive Green's functions through Dyson's equation solved self-consistently with Poisson equation. The dimensions of the device are such that the transport is forced to be coherent through the whole structure. The results show that at the coherent regime the standard MOS transistor loses appropriate gate action and
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A FinFET device was simulated using recursive Green's functions through Dyson's equation solved self-consistently with Poisson equation. The dimensions of the device are such that the transport is forced to be coherent through the whole structure. The results show that at the coherent regime the standard MOS transistor loses appropriate gate action and
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FN-CACTI: Advanced CACTI for FinFET and NC-FinFET Technologies
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2022Divya Praneetha Ravipati +5 more
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2018
Ever since Intel launched its successful 22-nm Ivy Bridge CPU chip, establishing nonplanar finFET technology as a viable means of extending Moore’s law, variations of the basic finFET or the nanowire transistor have been introduced into nanoelectronics research and manufacturing efforts at an unprecedented rate.
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Ever since Intel launched its successful 22-nm Ivy Bridge CPU chip, establishing nonplanar finFET technology as a viable means of extending Moore’s law, variations of the basic finFET or the nanowire transistor have been introduced into nanoelectronics research and manufacturing efforts at an unprecedented rate.
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Study of Sensitivity and Noise on Magnetic FinFET (MAG-FinFET)
2023 9th International Conference on Engineering, Applied Sciences, and Technology (ICEAST), 2023Khine Thandar Nyunt Swe +2 more
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Reliable and low power Negative Capacitance Junctionless FinFET based 6T SRAM cell
The Integration VLSI Journal, 2023Shelja Kaushal, Ashwani K Rana
exaly
Key characterization factors of accurate power modeling for FinFET circuits
Science China Information Sciences, 2014Xiaoxin Cui, Nan Liao, Kaisheng Ma
exaly
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013), 2013
Enrico D. Neto +3 more
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Enrico D. Neto +3 more
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Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits
Microelectronic Engineering, 2012Mehdi Saremi +2 more
exaly