Results 61 to 70 of about 7,054 (167)
Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence
Advanced Science, Volume 13, Issue 59, 23 October 2026.We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang +10 more
wiley +1 more source
Dependability analysis of nano-scale FinFET circuits
, 2006 FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous work have studied the performance or power advantages of FinFET circuits over bulk CMOS circuits.
Bernstein, Kerry +3 more
core +1 more source
Diamond FinFET without Hydrogen Termination
, 2018 In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective ...
Xiwei Bai +3 more
core +2 more sources
Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor
Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa +4 more
wiley +1 more source
Advanced Materials, Volume 38, Issue 52, 16 September 2026.BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen +12 more
wiley +1 more source
Impact of high-κ spacer on circuit level performance of junctionless FinFET
, 2017 This paper shows the circuit level performance comparison of low-κ and high-κ spacer Junctionless FinFET(J-FinFET). TCAD simulations show that for high-κ (HfO2, κ=22) spacer J-FinFET, the device performance parameters such as DIBL (drain induced barrier ...
Mohapatra, Nihar Ranjan +5 more
core +1 more source
Introducing 14-nm FinFET technology in Microwind
, 2017 This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described.
Sicard, Etienne
core +1 more source
Micromachines, 2020 As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators.
Cristina Medina-Bailon +8 more
doaj +1 more source
International Journal of Polymer Science, 2022 The major motivation behind transistor scaling is the requirement for high-speed transistors with lower fabrication costs. When the fin thickness or breadth is smaller than 10 nm in a trigate FET, charges travel in a nonconfined fashion, resulting in the
Jami Venkata Suman +2 more
doaj +1 more source
Advanced Materials Technologies, Volume 11, Issue 17, 3 September 2026.Hf–Zr–O‐based morphotropic phase boundary (MPB) thin films often suffer from limited endurance and poor uniformity due to intrinsic phase instability. This work proposes a nanolaminate architecture that spatially separates competing phases, stabilizes phase formation, and suppresses wake‐up‐induced degradation.
Hojung Jang, Hyunsang Hwang
wiley +1 more source