Results 51 to 60 of about 451 (114)

AI-Assisted Design of Drain-Extended FinFET With Stepped Field Plate for Multi-Purpose Applications

IEEE Journal of the Electron Devices Society
Fin Field-Effect-Transistor (FinFET) has become fundamental components in advanced integrated circuit, while the drain-extended FinFET (DE-FinFET) features a lightly doped drain extension region to improve the device’s breakdown voltage.
Xiaoyun Huang, Hongyu Tang, Chenggang Xu, Yuxuan Zhu, Yan Pan, Dawei Gao, Yitao Ma, Kai Xu   +7 more
doaj   +1 more source

Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations

Cogent Engineering
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm).
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi   +6 more
doaj   +1 more source

Transistores FinFET

, 2010
[spa] El presente articulo pretende dar a conocer los dispositivos FinFET, que ventajas presenta su estructura frente a los dispositivos MOS clásicos, cual es el estado del arte actual y finalmente, cual es el impacto de este tipo de transistor en el mercado.
Mas Boned, Francisco de Borja, García Moreno, Eugenio   +1 more
openaire   +1 more source

Comparing the Performance of FinFET SoI and FinFET Bulk

Scinzer Journal of Engineering, 2016
openaire   +1 more source

Investigation of Noise and Resolution of Magnetic FinFET (MAG-FinFET)

IEEE Sensors Journal
Khine Thandar Nyunt Swe, Amporn Poyai, Toempong Phetchakul   +2 more
openaire   +1 more source

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Q-FinFET: The Next Generation FinFET

Journal of Nanoelectronics and Optoelectronics, 2019
Rajiv Ranjan Thakur
exaly   +2 more sources

Comparison of SOI FinFETs and Bulk FinFETs

ECS Meeting Abstracts, 2009
Abstract not Available.
Jong-Ho Lee, Ju-Wan Lee, Han-A-Reum Jung, Byung-Kil Choi   +3 more
openaire   +2 more sources

GC-eDRAM design using hybrid FinFET/NC-FinFET

Proceedings of the ACM/IEEE International Symposium on Low Power Electronics and Design, 2020
Gain cell embedded DRAMs (GC-eDRAM) are a potential alternative for conventional static random access memories thanks to their attractive advantages such as high density, low-leakage, and two-ported operation. As CMOS technology nodes scale down, the design of GC-eDRAM at deeply scaled nanometer nodes becomes more challenging.
Ramin Rajaei, Yen-Kai Lin, Sayeef S. Salahuddin, Michael T. Niemier, Xiaobo Sharon Hu   +4 more
openaire   +1 more source

FinFET SRAM Design

2010 23rd International Conference on VLSI Design, 2010
This paper describes the SRAM design concept in FinFETtechnologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs is explored.Variety of SRAM design techniques are presented exploiting the advantages of tied gate and independent gate controlled configurations.
Rajiv V. Joshi, Keunwoo Kim, Rouwaida Kanj   +2 more
openaire   +1 more source

FinFETs and their Applications

2023
Researchers are motivated to develop novel electronic switches with improved low power properties and reduced short channel effects due to the downscaling of conventional MOSFETs (SCE). Using multi-gate FinFET technology could improve control of the gate over the channel charge. We have discussed FinFETs, or multigate transistors, in this chapter.
Savitesh Madhulika Sharma, Avtar Singh
openaire   +1 more source