Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Nanomaterials, 2021 In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li +9 more
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Performance evaluation of SRAM design using different field effect transistors [PDF]
E3S Web of Conferences, 2023 SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah +5 more
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Характеристики комбінованого (Si та Ge) інвертора FinFET-CMOS на основі співвідношення транзисторів навантаження до драйверу [PDF]
, 2022 У статті пропонується новий метод адаптивного вибору найкращого співвідношення плавців драйвера до навантажувального транзистора логічного інвертора CMOS FinFET відповідно до кращих значень запасу по шуму та напруги перегину з порівнянням при ...
Safwan, Mawlood Hussein +3 more
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Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide
Memories - Materials, Devices, Circuits and Systems, 2023 This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide into account. The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence
Vandana Singh Rajawat +2 more
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Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio [PDF]
, 2021 This paper proposes a novel method to adaptively select the best driver to load transistor fin ratio of six transistor (6T) FinFET-SRAMs according to the best values of noise margins and inflection voltages with a comparison between using Si and Ge ...
Hashim, Yasir +4 more
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Temperature sensitivity based on channel length of FinFET transistor [PDF]
, 2018 This paper presents the temperature sensitivity of the gate length-based fin field effect transistor (FinFET) and the possibility of using such a transistor as a nano-temperature sensor.
Hashim, Yasir +5 more
core +2 more sources
Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications
IEEE AccessIn this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ...
Byeongju Ha +3 more
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Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations [PDF]
Journal of Optoelectronical Nanostructures, 2020 : We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to ...
Payman Bahrami +3 more
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FinFET Performance Enhancement by Source/Drain Cavity Structure Optimization
Journal of Microelectronic Manufacturing, 2020 Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications.
Man Gu, Wenjun Li, Haiting Wang, Owen Hu
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Advanced Intelligent Systems, 2022 A capacitive neural network with a capacitive crossbar array that can replace a traditional resistive crossbar array can drastically lower static power consumption during reading operations because a capacitor consumes only dynamic power. Herein, a leaky
Joon-Kyu Han +3 more
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