Results 31 to 40 of about 451 (114)
Micromachines, 2020 As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators.
Cristina Medina-Bailon +8 more
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FinFETs: From Devices to Architectures [PDF]
Advances in Electronics, 2014 Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology ...
Debajit Bhattacharya, Niraj K. Jha
openaire +1 more source
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
East European Journal of PhysicsIn this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-based FinFET is simulated.
Atabek Atamuratov +5 more
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Sensors, 2020 Wireless Capsule Endoscopy is a state-of-the-art technology for medical diagnoses of gastrointestinal diseases. The amount of data produced by an endoscopic capsule camera is huge.
Ioannis Intzes +2 more
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FinFET to GAA MBCFET: A Review and Insights
IEEE AccessThis review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures.
Rinku Rani Das +2 more
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Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices [PDF]
EPJ Web of ConferencesThis article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET.
Datta Emona, Basu Arnab, Paul Sayan
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Multi-Channel Step FinFET With Spacer Engineering
IEEE AccessMulti-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration.
Rinku Rani Das, Alex James
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Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
IEEE Journal of the Electron Devices Society, 2017 The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the ...
Eunah Ko +4 more
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MicromachinesIn this study, we propose a lateral power-reduced surface field FinFET (LPR-FinFET) to achieve high breakdown voltage and low on-resistance. We investigate the electric field distribution within the reduced surface field (RESURF) structure under reverse ...
Chang Woo Song +4 more
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BDD-Based Topology Optimization for Low-Power DTIG FinFET Circuits
Active and Passive Electronic Components, 2019 This paper proposed a logic synthesis method based on binary decision diagram (BDD) representation. The proposed method is optimized for dual-threshold independent-gate (DTIG) FinFET circuits.
Haiyan Ni +3 more
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