Results 21 to 30 of about 451 (114)
Review of Nanosheet Transistors Technology
Tikrit Journal of Engineering Sciences, 2021 Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET ...
Firas .. Agha +2 more
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Elektronika ir ElektrotechnikaThis paper presents high-frequency universal filter applications based on a voltage differential buffered amplifier (VDBA) using 32 nm fin field effect transistor (FinFET) technology.
Sevda Altan Yagci +2 more
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Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
Frontiers in ElectronicsThis paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET).
Priyanka Agrwal, Ajay Kumar
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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
Applied Sciences, 2020 The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim +9 more
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A Cross-Layer Framework for Designing and Optimizing Deeply-Scaled FinFET-Based Cache Memories
Journal of Low Power Electronics and Applications, 2015 This paper presents a cross-layer framework in order to design and optimize energy-efficient cache memories made of deeply-scaled FinFET devices. The proposed design framework spans device, circuit and architecture levels and considers both super- and ...
Alireza Shafaei +3 more
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Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset
MicromachinesPlanar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses
Hongwei Zhang +6 more
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Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
East European Journal of PhysicsThe self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the back oxide, is simulated.
M.M. Khalilloev +3 more
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IET Circuits, Devices and SystemsThe geometrical parameters of the fin-shaped field-effect transistor (FinFET) significantly affect the outcomes of the FinFET-based designs. Various machine learning (ML) schemes have been presented to optimize the geometrical parameters of the FinFET ...
Vijayalaxmi Kumbar, Manisha Waje
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International Journal of Polymer Science, 2022 The major motivation behind transistor scaling is the requirement for high-speed transistors with lower fabrication costs. When the fin thickness or breadth is smaller than 10 nm in a trigate FET, charges travel in a nonconfined fashion, resulting in the
Jami Venkata Suman +2 more
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Фізика і хімія твердого тілаРозвиток сучасної електроніки ґрунтується на впровадженні сучасних мікро- та наноелектронних технологій. Традиційні комплементарні метал-оксид-напівпровідникові (КМОН) планарні транзисторні структури на основі масивного кремнію поступово поступаються ...
I. Kohut, O. Samarchuk
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