Results 11 to 20 of about 451 (114)

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

Nanomaterials, 2021
In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li, Fei Zhao, Xiaohong Cheng, Haoyan Liu, Ying Zan, Junjie Li, Qingzhu Zhang, Zhenhua Wu, Jun Luo, Wenwu Wang   +9 more
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Performance evaluation of SRAM design using different field effect transistors [PDF]

E3S Web of Conferences, 2023
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah, Y. Mallikarjuna Rao, Jayamma Manjula, M.K. Linga Murthy, S. Feroz Shah Ahmed, Alzubaidi Laith H.   +5 more
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Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide

Memories - Materials, Devices, Circuits and Systems, 2023
This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide into account. The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence
Vandana Singh Rajawat, Ajay Kumar, Bharat Choudhary   +2 more
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An Artificial Neuron with a Leaky Fin‐Shaped Field‐Effect Transistor for a Highly Scalable Capacitive Neural Network

Advanced Intelligent Systems, 2022
A capacitive neural network with a capacitive crossbar array that can replace a traditional resistive crossbar array can drastically lower static power consumption during reading operations because a capacitor consumes only dynamic power. Herein, a leaky
Joon-Kyu Han, Ji-Man Yu, Do-Wan Kim, Yang-Kyu Choi   +3 more
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Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications

IEEE Access
In this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ...
Byeongju Ha, Dongyeong Kim, Taekhan Yoon, Sola Woo   +3 more
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Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance

IEEE Open Journal of Nanotechnology
This work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced
Praween Kumar Srivastava, Atul Kumar, Ajay Kumar   +2 more
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Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations [PDF]

Journal of Optoelectronical Nanostructures, 2020
: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to ...
Payman Bahrami, Mohammad Reza Shayesteh, Majid Pourahmadi, Hadi Safdarkhani   +3 more
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FinFET Performance Enhancement by Source/Drain Cavity Structure Optimization

Journal of Microelectronic Manufacturing, 2020
Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications.
Man Gu, Wenjun Li, Haiting Wang, Owen Hu
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Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric

Memories - Materials, Devices, Circuits and Systems
In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length.
Priyanka Agrwal, Ajay Kumar
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Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor

Nano Convergence, 2020
In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric ...
Chankeun Yoon, Seungjun Moon, Changhwan Shin   +2 more
doaj   +1 more source