Results 111 to 120 of about 7,054 (167)

Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

, 2018
Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility.
Nurul Aida Farhana Othman, Soin, Norhayati, Norhayati Soin, Othman, Nurul Aida Farhana, Hatta, Sharifah Fatmadiana Wan Muhamad, Sharifah Fatmadiana Wan Muhamad Hatta   +5 more
core   +1 more source

Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations

Cogent Engineering
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm).
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi   +6 more
doaj   +1 more source

SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET

, 2008
This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift
Y. Onishi, W. T. Ng, Wu, R., H. Wang, H. P. E. Xu, J. K. O. Sin, Ng, W. T., R. Wu, Wang, H., Sin, J. K.O., Onishi, Y., Xu, H. P.E.   +11 more
core   +1 more source

Design and temperature assessment of analog/RF and linearity parameters on dual material gate junctionless FinFET at 7 nm technology node for nano scale applications. [PDF]

Sci Rep
Kusuma R.
europepmc   +1 more source

Quantum Statistical Behaviors of Carriers in Strong Inversion Layers Associated with Mobility and Threshold Voltage in FinFET Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Yang HY.
europepmc   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Analytical Modeling on Investigating the Electric Field Shift Behavior of GaN Vertical FinFETs. [PDF]

ACS Omega
Michel A, Syamsul M, Arun Samuel TS, Anand IV, George NM, Nirmal D.   +5 more
europepmc   +1 more source

Full-scattering-matrix deterministic phonon boltzmann transport simulation. [PDF]

Sci Rep
Ju YS.
europepmc   +1 more source

An efficient serialized hardware implementation of the ASCON algorithm. [PDF]

Sci Rep
Mohamed HAA, Taher M, Shousha HM, Mohsen Z, Abdelrazik MM, Ismail Y, Saeed A.   +6 more
europepmc   +1 more source

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]

Sensors (Basel)
Moscotin M, Jorudas J, Prystawko P, Saniuk M, Kovalevskij V, Kašalynas I.   +5 more
europepmc   +1 more source