Results 121 to 130 of about 7,054 (167)

Two Kelvin Operation of Ultrawide-Bandgap β-Ga₂O₃ FinFETs and Logic Inverter Integrated Circuits. [PDF]

Nano Lett
Khandelwal V, Maciel García GI, Kumar M, Blanda F, Xiao N, Zheng D, Mainali G, Rajbhar MK, Tang X, Zhang X, Li X.   +10 more
europepmc   +1 more source

Design and analysis of NC-FinFET using Pb(Zr_yTi_1-y)O₃ under high ionising radiations. [PDF]

Sci Rep
Tripathi SL, Prakash NN, Yadav AK, Raj B, Wijayanto I.   +4 more
europepmc   +1 more source

The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length. [PDF]

Nanomaterials (Basel), 2023
Saha P, Sankar Dhar R, Nanda S, Kumar K, Alathbah M.   +4 more
europepmc   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

FinFET pienikohinaiset vahvistimet FR3-taajuusalueella

Modern wireless systems operate at increasingly higher frequencies in order to achieve high data transfer rate and low latency. The frequency range 3 (FR3, approximately 7.125–24.25 GHz) offers wide bandwidth but introduces challenges such as stronger ...
Heinonen, Silja
core  

Hidden Order in the Apparent Chaos of Bias Temperature Instability. [PDF]

Micromachines (Basel)
Bernstein JB.
europepmc   +1 more source

Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. [PDF]

Sci Rep
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N.   +21 more
europepmc   +2 more sources

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. [PDF]

Sci Rep
Oh K, Kim H, Kim Y, Yoo H, Choi M, Maeng W, Kim S, Lee HJ, Baek CK.   +8 more
europepmc   +1 more source

Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]

Sci Rep
Hemmasi SP, Moaiyeri MH, Eslami N, Ebrahimi B.   +3 more
europepmc   +1 more source