Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]
Yugender P +5 more
europepmc +1 more source
Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]
Yugender P +6 more
europepmc +1 more source
Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Shih AC, Zhan YH, Chin A.
europepmc +1 more source
An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]
Zhou H.
europepmc +1 more source
Epitaxial Mixed-Dimensional MoS<sub>2</sub> Nanofin-Nanoribbon Hybrids and Their Integration into Electronic and Optoelectronic Devices. [PDF]
Danieli Y +7 more
europepmc +1 more source
Effect of C<sub>2</sub>H<sub>2</sub>F<sub>4</sub>/CF<sub>4</sub>O with low global warming potentials on SiN<sub>x</sub> etching as a CHF<sub>3</sub> replacement. [PDF]
Kim KL +11 more
europepmc +1 more source
Comparing the Performance of FinFET SoI and FinFET Bulk
openaire +1 more source
FinFET Device Simulation and NAND Gate Implementation using DG FinFET
Bhavesh H., Kruti B.
openaire +1 more source
Sub-THz communication systems: pushing the capabilities of silicon. [PDF]
Gruber J +6 more
europepmc +1 more source
Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices. [PDF]
Yu H +5 more
europepmc +1 more source

