Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Shih AC, Zhan YH, Chin A.
europepmc +1 more source
An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]
Zhou H.
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Epitaxial Mixed-Dimensional MoS<sub>2</sub> Nanofin-Nanoribbon Hybrids and Their Integration into Electronic and Optoelectronic Devices. [PDF]
Danieli Y +7 more
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Effect of C<sub>2</sub>H<sub>2</sub>F<sub>4</sub>/CF<sub>4</sub>O with low global warming potentials on SiN<sub>x</sub> etching as a CHF<sub>3</sub> replacement. [PDF]
Kim KL +11 more
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Sub-THz communication systems: pushing the capabilities of silicon. [PDF]
Gruber J +6 more
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Comparing the Performance of FinFET SoI and FinFET Bulk
openaire +1 more source
FinFET Device Simulation and NAND Gate Implementation using DG FinFET
Bhavesh H., Kruti B.
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Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices. [PDF]
Yu H +5 more
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Enhanced CPU Design for SDN Controller. [PDF]
Bazzi HS +4 more
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Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range. [PDF]
Singh S, Dhar RS, Banerjee A, Gupta V.
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