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Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory
IEEE Transactions on Electron Devices, 20203-D NAND flash memory has become increasingly popular nonvolatile storage devices due to large capacity and high performance. With the increase of program/erase (P/E) cycles and retention periods, the threshold voltage distribution of 3-D NAND flash ...
Meng Zhang +5 more
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Flash-VStream: Memory-Based Real-Time Understanding for Long Video Streams
arXiv.orgBenefiting from the advancements in large language models and cross-modal alignment, existing multi-modal video understanding methods have achieved prominent performance in offline scenario.
Haoji Zhang +6 more
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Microelectronics Reliability, 2016
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and ...
Chong Leong Gan, Uda Hashim
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This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and ...
Chong Leong Gan, Uda Hashim
openaire +2 more sources
IEEE International Solid-State Circuits Conference, 2019
Advancements in 3D-Flash memory-layer-stacking technology has enabled density scaling that circumvents the lithography limitations which have prevented 2D-NAND Flash memory from scaling [1].
C. Siau +51 more
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Advancements in 3D-Flash memory-layer-stacking technology has enabled density scaling that circumvents the lithography limitations which have prevented 2D-NAND Flash memory from scaling [1].
C. Siau +51 more
semanticscholar +1 more source
Flash memory cells-an overview
Proceedings of the IEEE, 1997The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and
PAVAN P. +3 more
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Exploiting Process Similarity of 3D Flash Memory for High Performance SSDs
Micro, 20193D NAND flash memory exhibits two contrasting process characteristics from its manufacturing process. While process variability between different horizontal layers are well known, little has been systematically investigated about strong process ...
Youngseop Shim +5 more
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Characterization and Analysis of Bit Errors in 3D TLC NAND Flash Memory
IEEE International Reliability Physics Symposium, 20193D NAND flash memory has entered dynamically into the space of enterprise server and storage systems, offering significantly higher capacity and better endurance than the latest 2D technology node.
N. Papandreou +9 more
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Minimizing Retention Induced Refresh Through Exploiting Process Variation of Flash Memory
IEEE transactions on computers, 2019Refresh schemes have been the default approach in NAND flash memory to avoid data losses. The critical issue of the refresh schemes is that they introduce additional costs on lifetime and performance. Recent work proposed to minimize the refresh costs by
Yejia Di +5 more
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13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology
IEEE International Solid-State Circuits Conference, 2019Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1]–[3]. In the 2D-Flash era, 2b/cell (MLC) offered higher performance and reliability, while a 3b/cell (TLC) offered the lowest cost. Thanks to a larger feature
N. Shibata +51 more
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1999
Solid-state memory devices which retain information once the power supply is switched off are called “nonvolatile” memories. For instance, using standard digital technology, a nonvolatile memory can be implemented by writing permanently the data in the memory array during manufacturing (mask-programmed Read Only Memories, ROM).
OLIVO, Piero, E. ZANONI
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Solid-state memory devices which retain information once the power supply is switched off are called “nonvolatile” memories. For instance, using standard digital technology, a nonvolatile memory can be implemented by writing permanently the data in the memory array during manufacturing (mask-programmed Read Only Memories, ROM).
OLIVO, Piero, E. ZANONI
openaire +2 more sources