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3D Floating Gate NAND Flash Memories

2016
Planar NAND Flash memories (commercially available) are based on Floating Gate, which has been developed and engineered for many decades. Therefore, there have been many attempts to develop 3D Floating Gate cells in order to re-use all the know-how cumulated over time.
Rino Micheloni, Luca Crippa
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Floating gate memories: moore's law continues

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)., 2005
Floating gate memories are the mainstream of flash non volatile memories and have followed Moore's law scaling through multiple technology generations, representing one of the fastest growing memory segments. Looking forward, maintaining the pace of Moore's law scaling is increasingly difficult.
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Floating Gate Memory based on Ferritin Nanodots with High-k Gate Dielectrics

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
The memory characteristics of nanodot-type floating gate memory with high-k tunnel oxide were investigated by measuring the memory characteristics of metal–oxide–semiconductor (MOS) capacitors with biomineralized inorganic nanodots. Biomineralized iron bio nanodots (Fe-BNDs) accommodated in ferritin were utilized as a storage charge.
Kosuke Ohara   +6 more
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A temperature compensated array of CMOS floating-gate analog memory

Proceedings of 2010 IEEE International Symposium on Circuits and Systems, 2010
Floating-gate transistors have been extensively used as analog memory elements in adaptive learning and neural systems. However, conventional techniques for storing and programming sub-threshold currents on floating-gate transistors are sensitive to temperature variations thus limiting their applicability to controlled environments.
Chenling Huang, Shantanu Chakrabartty
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Organic Floating Gate Transistor Memory Devices

2015
Floating gate charge storage devices are one of the largest families of organic transistor-type memory electronics. The quantity of charge carriers stored in a specific trapping site can be precisely controlled in floating gate memory, breaking through the limitations of device size and meeting the requirement for high density data storage.
Hung Chin Wu   +3 more
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Recent Patents in Semiconductor Nanocluster Floating Gate Flash Memory

Recent Patents on Nanotechnology, 2007
Nanoclusters (NC) as charge storage nodes have been applied in nonvolatile, high-speed, high-density and low-power memory devices. Compared with conventional floating gate memory, where a layer of poly-Si is used for charge storage, a memory device composed of nanoclusters isolated by dielectrics benefits from a relatively low operating voltage, high ...
Jiyan Y, Dai, Pui-Fai, Lee
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Floating-Gate 1Tr-NOR eFlash Memory

2017
In this chapter, we will highlight the peculiar features of one of the most popular implementations of the embedded flash cell: the so-called 1Tr-NOR. The one-transistor cell has been by far the most adopted cell architecture in the world of flash NOR stand-alone memory.
Antonino Conte   +3 more
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Floating gate potential of gate-all-around floating gate memory cell: parameter extraction and compact model

Physica Scripta
Abstract The compact modeling of flash memories is crucial for integrated circuit designers to carry out efficient and precise circuit-level evaluations, particularly in the case of 3D NAND flash where the 3D geometry leads to significant parasitic coupling impacts on performance.
Afiq Hamzah   +4 more
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