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Graphene-Graphene Oxide Floating Gate Transistor Memory
Small, 2014A novel transparent, flexible, graphene channel floating-gate transistor memory (FGTM) device is fabricated using a graphene oxide (GO) charge trapping layer on a plastic substrate. The GO layer, which bears ammonium groups (NH3+), is prepared at the interface between the crosslinked PVP (cPVP) tunneling dielectric and the Al2 O3 blocking dielectric ...
Sukjae, Jang +4 more
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A model for TID effects on floating Gate Memory cells
IEEE Transactions on Nuclear Science, 2004[object Object]
Cellere, Giorgio +5 more
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Single-ion dosemeter based on floating gate memories
Radiation Protection Dosimetry, 2006Floating Gate (FG) nonvolatile memories are based on a tiny polysilicon layer (the FG) which can be permanently charged with electrons or holes, thus changing the threshold voltage of a MOSFET. Every time a FG is hit by a high energy ion, it experiences a charge loss, depending on the ion linear energy transfer (LET) and on the transistor geometrical ...
G, Cellere +4 more
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Reliability of floating gate memories
2008This chapter aims at giving an overview of the most important reliability issues affecting the floating gate memory technology which are the key elements whose evaluation is on the basis of each ECC strategy. Reliability issues will be discussed by considering the single cell first (intrinsic cell degradation) and then by introducing all the important ...
CHIMENTON, Andrea, M. Atti, OLIVO, Piero
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Nanoparticle Floating Gate Flash Memories
ECS Transactions, 2009This work reports Si and SiGe(C) nanoparticle formation on high-k dielectrics to work as charge storage nodes in NC Flash memories. When applying high fields for programming or erase operations the bands for the high-k dielectric bend sufficiently to cause Fowler Nordheim (FN) tunneling through a narrow triangular barrier, while higher bandgap SiO2 ...
S. K. Banerjee +3 more
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A novel double floating-gate unified memory device
2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC), 2012A novel double floating-gate unified memory device is experimentally demonstrated for the first time. The device can be used to store both volatile and nonvolatile memory states simultaneously. Simulations of scaled devices show that the device offers several advantages compared to conventional memory devices. Such a device could have a dramatic impact
Neil Di Spigna +4 more
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Science, 2019
Device Technology Digital implementations of artificial neural networks perform many tasks, such as image recognition and language processing, but are too energy intensive for many applications. Analog circuits that use large crossbar arrays of synaptic memory elements represent a low-power alternative, but most devices cannot update the synaptic ...
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Device Technology Digital implementations of artificial neural networks perform many tasks, such as image recognition and language processing, but are too energy intensive for many applications. Analog circuits that use large crossbar arrays of synaptic memory elements represent a low-power alternative, but most devices cannot update the synaptic ...
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Graphene nano-floating gate transistor memory on plastic
Nanoscale, 2014A transparent flexible graphene nano-floating gate transistor memory (NFGTM) device was developed by combining a single-layered graphene active channel with gold nanoparticle (AuNP) charge trap elements.
Sukjae, Jang +2 more
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Soft errors in floating gate memory cells: A review
Microelectronics Reliability, 2015Abstract Soft errors due to neutrons and alpha particles are among the main threats for the reliability of digital circuits operating at terrestrial level. These kinds of errors are typically associated with SRAMs and latches or DRAMs, and less frequently with non-volatile memories.
BAGATIN, MARTA, GERARDIN, SIMONE
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Erratic Effects of Irradiation in Floating Gate Memory Cells
12th IEEE International On-Line Testing Symposium (IOLTS'06), 2006The information stored in floating gate (FG) memory arrays can be degraded by single, high energy, ions. Their first effect is a quick and large charge loss from programmed FGs, largely exceeding that expected based on simple models. The second phenomenon is a retention problem in hit FGs, due to defects generated by the ion.
G. Cellere +3 more
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