Results 181 to 190 of about 8,377,275 (246)

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

Ion Concentration and Voltage Imaging With Fluorescent Nanodiamonds

Advanced Materials, EarlyView.
We demonstrate reversible switching between the fluorescent NV0 and the dark NV+ state, in sub‐30 nm FNDs via surface oxidation and hydrogenation, respectively. In an electrochemical cell, we show that the fluorescence from hydrogenated particles enables all‐optical imaging of voltages and ion concentrations at the micrometer scale.
Patrick Voorhoeve, Alessandro Mameli, Hiroshi Abe, Takeshi Ohshima, Qiang Sun, Anita Quigley, Rob Kapsa, Nikolai Dontschuk, Philipp Reineck   +8 more
wiley   +1 more source

Electrostatic transfer of sub-micron magnetic particles onto cantilevers using a focused ion beam system. [PDF]

J Vac Sci Technol B Nanotechnol Microelectron
Sun P, Du Laney GR, Fuchs TM, Oosterkamp TH, Thomas MG, Marohn JA.   +5 more
europepmc   +1 more source

Directing Near‐Perfect (001) Orientation in Wafer‐Scale BiOI Thin Films via Halide‐Mediated van der Waals Stacking

Advanced Materials, EarlyView.
Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur, Ashakiran Maibam, Hayden Tuohey, Tony Nguyen, Mei Xian Low, Sumeet Walia, Zijun (June) Yong, Ravichandar Babarao, Daniel Gomez, Enrico Della Gaspera, Joel van Embden   +10 more
wiley   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

Direct-Write Editing Niobium Superconducting Josephson Junctions and Devices via XeF₂ Gas Assisted Focused Electron Beam Induced Etching. [PDF]

Small Methods
Gellerup S, Lasseter J, Zhu H, Sprecker K, Retterer ST, Randolph S, Gilbert D, Rack PD.   +7 more
europepmc   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source