Results 1 to 10 of about 20,361 (264)
Sensors, 2021 Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, TJ. The accuracy of state-of-the-art LED junction temperature monitoring
Demetrio Iero +6 more
doaj +1 more source
Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen +10 more
doaj +1 more source
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
doaj +1 more source
Energy Reports, 2023 The “source–load” attributes of the nodes in a new energy power system are complex and diverse due to a large amount of new energy access. The node power (active and reactive power) in the system can offer a changing mode, which causes several serious ...
Xuan Zhang +4 more
doaj +1 more source
Технологія та конструювання в електронній апаратурі, 2023 The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base,
Оlекsіі Polukhin, Vitalii Kravchina
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2019 A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility ...
Jianming Lei +8 more
doaj +1 more source
Doping-Less SiC p-i-n Diode: Design and Investigation
IEEE Access, 2021 We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
doaj +1 more source
Nuclear Engineering and Technology, 2017 Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 ...
Ha Ni Baek +5 more
doaj +1 more source
Single‐switch coupled‐inductors‐based high step‐up converter with reduced voltage stress
IET Power Electronics, 2023 This paper proposes a non‐isolated DC‐DC high step‐up converter. To achieve a high voltage conversion ratio and overcome the problems related to near unity duty‐cycle of the conventional boost converter in high step‐up applications, coupled‐inductors ...
Siamak Khalili +3 more
doaj +1 more source
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 High-frequency limiting rectifier diodes are used in power sources for rectifying alternating current, in protective elements of radio-electronic equipment, and in switching devices.
A. V. Karimov +5 more
doaj +1 more source