Results 11 to 20 of about 20,361 (264)
Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices. [PDF]
Materials (Basel), 2019 An abnormal star-like defect was found on the failed SiC gate turn-off thyristor (GTO) devices after metal removal and KOH etching at 450 °C in this work. It is of extraordinary larger size of 210–580 µm, even much larger than the etch pit of a micropipe in 4H-SiC.
Cui Y, Dong P, Chen Z, Li Z, Li L, Li J.
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Online Multi-Parameter Identification for PMSM Parameter Monitoring Based on a ZOH Model and Dual-Sampling Strategy [PDF]
SensorsThe accuracy of online parameter identification for permanent magnet synchronous motors (PMSMs) is constrained by discrete model errors, rank deficiency in the steady-state identification matrix, and voltage deviations resulting from inverter ...
Sidong He +4 more
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Nuclear Engineering and Technology, 2023 We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2.
Hani Baek +3 more
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On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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Study on the space vector modulation strategy of matrix converter under abnormal input condition
Alexandria Engineering Journal, 2022 Since the matrix converter (MC) has no intermediate DC energy storage link, any disturbance at the input will affect the output. To guarantee the safe and stable operation of MC system, a feed-forward compensation (FFC) strategy for MC operation in ...
Delu Li +4 more
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Novel Low Loss LIGBT With Assisted Depletion N-Region and P-Buried Layer
IEEE Journal of the Electron Devices Society, 2021 A novel low loss lateral insulated gate bipolar transistor (LIGBT) with high voltage level is designed and studied in this paper, and is proposed with assisted depletion N-region (AD) and P-buried layer (PB) in the bulk Si substrate, named PBAD LIGBT ...
Licheng Sun, Baoxing Duan, Yintang Yang
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A High-Efficiency Low-Power Rectifier for Wireless Power Transfer Systems of Deep Micro-Implants
IEEE Access, 2020 In this article, the so-called bootstrapping rectifier (BSR) proposed by Hashemi et al. is re-analyzed, and a novel high-efficiency low-power rectifier called Opto-Coupled Dynamic Gate-Control (OCDGC) rectifier is presented based on the bootstrapping ...
Liyu Huang, Alan Murray, Brian W. Flynn
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Jurnal Elkomika, 2023 ABSTRAK Transformator distribusi mengubah tegangan listrik tinggi menjadi rendah. Pada sekunder transformator, tegangan dan arus listrik cukup besar sehingga terjadi disipasi panas berlebihan karena timbulnya tahanan listrik pada titik koneksi sekunder ...
GALIH FEBRYANTA ASWA YUDHISTIRA +2 more
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Micromachines, 2020 Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrication.
Min-Woo Ha +3 more
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Optimum Control of Grid-Connected Solar Power System Under Asymmetrical Voltage Drop
International Journal of Renewable Energy Development, 2022 Solar power systems are now gradually dominating in providing clean, environmentally friendly energy and human health. In areas with a large share of solar power, grid connection control plays a key role in ensuring operational quality and stability ...
Van Binh Nguyen
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