Results 211 to 220 of about 20,361 (264)

Factors determining forward voltage drop and forward blocking in the field terminated diode (FTD)

1977 International Electron Devices Meeting, 1977
Using exact numercial solutions of the full set of semiconductor device equations the field terminated diode (FTD) structure is investigated. It is shown that the grid structure reduces current flow by causing the electron current to funnel around the grid and at the same time diverting hole current through the grid.
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High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

Japanese Journal of Applied Physics, 2015
In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure.
Doohyung Cho, Seulgi Sim, Kunsik Park, Jongil Won, Sanggi Kim, Kwangsoo Kim   +5 more
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High current characteristics of asymmetrical p-i-n diodes having low forward voltage drops

IEEE Transactions on Electron Devices, 1976
A closed form solution for the forward characteristics of a very asymmetrical step-junction p-i-n diode at high current levels is derived and discussed. It is found that the forward voltage decreases significantly when the amount of the impurities per unit area of one of the highly doped regions is reduced.
M. Naito, H. Matsuzaki, T. Ogawa
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Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Materials Science Forum, 2010
Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of ...
Gil Yong Chung, Mark J. Loboda, Siddarth G. Sundaresan, Ranbir Singh   +3 more
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Factors determining forward voltage drop in the field-terminated diode (FTD)

IEEE Transactions on Electron Devices, 1978
Recently, there has been a revival of interest in a device first introduced in the early sixties and called the "gridistor" and currently referred to as the "FTD." The FTD offers the promise of low forward drop of the SCR together with the higher switching speeds and freedom from dV/dt and di/dt problems of the transistor.
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Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature

Materials Science Forum, 2012
The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability should be enhanced not to cause the destructive breakdown.
Takashi Tsuji, Akimasa Kinoshita, Noriyuki Iwamuro, Kenji Fukuda, Kazuo Tezuka, Tatsuro Tsuyuki, Hiroshi Kimura   +6 more
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Forward voltage drop across a PN junction diode at high current densities †

International Journal of Electronics, 1971
Abstract To calculate the forward voltage drop across a PN junction diode at high current densities, it is necessary to either solve a system of non-linear differential equations by numerical methods for specific cases or to approximate the electric field in the bulk to obtain closed form solutions.
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Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor

Solid-State Electronics, 2005
An analytical model for the carrier density at the accumulation layer of TIGBT (Trench Insulated Gate Transistor) is presented in terms of the aspect ratio with the influence of the depth of the trench gate below the P base taken into account. Based on the model, analytic expressions for the potential drop on the drift region are derived using a linear
Jin-Woo Moon, Yearn-Ik Choi, Sang-Koo Chung   +2 more
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A brief analysis of the transient forward voltage drop in fast diodes

IEE Proceedings I Solid State and Electron Devices, 1985
The transient forward voltage drop of fast diodes for medium power circuits is investigated using a computer model. Fast diodes, of both pn and PIN structures, are experimentally examined for a range of electrical and physical parameters. A multiple curvilinear statistical regression was used on the results and an empirical relationship is presented.
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EXPERIMENTAL DEMONSTRATION OF 1200V SiC-SBDs WITH LOWER FORWARD VOLTAGE DROP AT HIGH TEMPERATURE

SAE Technical Paper Series, 2011
<div class="section abstract"><div class="htmlview paragraph">The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability
Takashi Tsuji, Akimasa Kinoshita, Noriyuki Iwamuro, Kenji Fukuda, Hiroshi Kimura   +4 more
openaire   +1 more source