Results 221 to 230 of about 11,813 (260)
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Photoreflectance of GaAs/SI-GaAs interface
Physica Status Solidi (a), 1993Photoreflectance spectra of doped molecular-beam-epitaxy GaAs films grown on semi-insulating GaAs substrate, modulated by different pump beams, are studied. From the interference effect of two light beams reflected from different interfaces of a sample, the PR signals from the surface of the MBE film and that from the interface of film and substrate ...
Zhonghe Wang, Shihong Pan, Shanming Mu
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Characterization of GaAs/Si/GaAs Heterostructures
Japanese Journal of Applied Physics, 1992GaAs/Si(n)/GaAs, n=1 to 3 mono-layers (ML) were grown on GaAs (100) substrates using molecular beam epitaxy. Double crystal X-ray diffraction rocking curve and Rutherford backscattering/chanelling studies indicated that 1 ML of Si grows coherently and psuedomorphicatly on GaAs and 2 and 3 ML Si exhibit increasing defect nature and are probably ...
T. Sudersena Rao +4 more
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2017
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
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The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
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2014
?????????????????????? ?????????????????????? ???????????????????? ?? ???????????????? ?????????????????? ???????????????????????? ?????? ???????????????????????? ????-GaAs ?????????????? ??????. ?????????????????? ?????????????????????????? ???????????????????????????? ?? ???????????? ?????????????????? ???????????? ?? ?????????????????????????????? ??
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?????????????????????? ?????????????????????? ???????????????????? ?? ???????????????? ?????????????????? ???????????????????????? ?????? ???????????????????????? ????-GaAs ?????????????? ??????. ?????????????????? ?????????????????????????? ???????????????????????????? ?? ???????????? ?????????????????? ???????????? ?? ?????????????????????????????? ??
+12 more sources
2018
A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
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A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
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2016
???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
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???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
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2013
???????????????????? ?????????? ?????????? ?????????????????? ?? ?????????????????????? ???? ?????????????????? ???????????????????????????? ??????????????, ?? ???????????????? ???? ???????????? ?????????????????????????? ???? ?????????????????? ?????????????????????? ???????????????????? ?????????????????? GaAs n-???????? ?? ?????????????? ????????????
+6 more sources
???????????????????? ?????????? ?????????? ?????????????????? ?? ?????????????????????? ???? ?????????????????? ???????????????????????????? ??????????????, ?? ???????????????? ???? ???????????? ?????????????????????????? ???? ?????????????????? ?????????????????????? ???????????????????? ?????????????????? GaAs n-???????? ?? ?????????????? ????????????
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Effect of Si Interlayers on Heteroepitaxial Films of GaAs/Si/GaAs and GaAs/Si/GaAs/Si System
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, 1991Masao TAMURA, Akihiro HASHIMOTO
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Electron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAs
Materials Science Forum, 1991T. Wada +4 more
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