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AIP Conference Proceedings, 2010
GaAs, GaAs:Si and GaAs:C films were deposited on GaAs substrates by Metal Organic Chemical Vapor Deposition( MOCVD) technique. The vibrational study of the heterostructures was performed by μ‐Raman technique, and measurements were made at different temperatures using a sample holder with a micro‐heater included within it.
J. F. Jurado +5 more
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GaAs, GaAs:Si and GaAs:C films were deposited on GaAs substrates by Metal Organic Chemical Vapor Deposition( MOCVD) technique. The vibrational study of the heterostructures was performed by μ‐Raman technique, and measurements were made at different temperatures using a sample holder with a micro‐heater included within it.
J. F. Jurado +5 more
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Encapsulation of GaAs and GaAsPd in furnace annealing
Vacuum, 1990Arsenic has a tendency to evaporate during high temperature annealing of GaAs. This process can have deleterious consequences for electrical properties of the contact to GaAs and must be controlled during annealing by encapsulants. It would also be advantageous if this cap could be integrated in the contact metallization scheme for GaAs.
Molarius, J. M. +3 more
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Applied Surface Science, 1994
Abstract Atomic layer growth of AlAs and AlGaAs were tried by alternate supply of GaCl3, AlCl3 and AsH3, and the growth process was monitored by an optical method such as the surface photo-absorption (SPA) method and the optical interference method.
M. Akamatsu +3 more
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Abstract Atomic layer growth of AlAs and AlGaAs were tried by alternate supply of GaCl3, AlCl3 and AsH3, and the growth process was monitored by an optical method such as the surface photo-absorption (SPA) method and the optical interference method.
M. Akamatsu +3 more
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physica status solidi (b), 2011
AbstractDifferent strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self‐catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high ...
J. Sadowski +7 more
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AbstractDifferent strategies for obtaining nanowires (NWs) with ferromagnetic properties using the molecular beam epitaxy (MBE) grown nanostructures combining GaAs and Mn were investigated. Four types of structures have been studied: (i) self‐catalyzed GaAs:Mn NWs grown at low temperatures on GaAs(100) substrates; (ii) GaAs:Mn NWs grown at high ...
J. Sadowski +7 more
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Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance
SPIE Proceedings, 2000GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thicknesses were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase ...
M. E. Constantino, B. Salazar-Hernandez
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Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctions
Journal of Vacuum Science and Technology, 1979The band edge photoluminescence of GaAs structures has been studied as a function of greater than band edge excitation energies. For p–p–n, GaAlAs–GaAs–GaAs, and p–n GaAs solar cell structures, it was found that the photoluminescent response curves were similar to the short circuit current response curves. A computer simulation program was developed to
J. M. Woodall +3 more
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EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS
Bulletin of the Lebedev Physics Institute, 2020The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmosphere.
I. P. Kazakov +5 more
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Electronic states of GaAs and GaAs+
The Journal of Chemical Physics, 1987Complete active space MCSCF (CASSCF) followed by first-order configuration interaction (FOCI) calculations are carried out on low-lying electronic states of GaAs and GaAs+. Among the 12 electronic states of GaAs considered here, six of them are bound and their spectroscopic properties are calculated.
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Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).
MRS Proceedings, 1991ABSTRACTThe growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity.
M. Lopez, Y. Takano, K. Pak, H. Yonezu
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Photoreflectance of GaAs/SI-GaAs interface
Physica Status Solidi (a), 1993Photoreflectance spectra of doped molecular-beam-epitaxy GaAs films grown on semi-insulating GaAs substrate, modulated by different pump beams, are studied. From the interference effect of two light beams reflected from different interfaces of a sample, the PR signals from the surface of the MBE film and that from the interface of film and substrate ...
Zhonghe Wang, Shihong Pan, Shanming Mu
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