Results 241 to 250 of about 11,813 (260)

GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding

Solar Energy Materials and Solar Cells, 2015
Dae-Myeong Geum, Sanghyeon Kim
exaly  

Surface reconstructions on GaAs(001)

Surface Science Reports, 2008
Akihiro Ohtake
exaly  

GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability

Advanced Energy Materials, 2012
Harry Atwater, Matthew Sheldon, Carissa Eisler   +2 more
exaly  

???????????????? ?? ?????????????????????????? ?????????????????? ???????????????????? ?????????? ?? ????????????????????-???????????????????? ???????????????? ???? ???????????? GaAs

2016
?? ???????????? ?????????????????????? ?????????????????????????? ???????????????????? ?????????????? ?? ???????????? ?? ?????? ???? ???????????? GaAs, ???? ??????????, ???? ?????? ???????????????? ???? ??????????????????????. ???????????????????????? ???????????????????? ???????????????? ?? ???????????????????? ?????????????????? ?????????????????? ???
openaire   +1 more source

A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

IEEE Transactions on Electron Devices, 1986
W F Kopp, K R Gleason
exaly  

X‐point excitons in AlAs/GaAs superlattices

Applied Physics Letters, 1986
Finkman E, Tamargo M C
exaly  

Antiphase boundaries in GaAs

Applied Physics Letters, 1985
De Cooman B C, Carter C B
exaly  

Characteristics of GaAs-based concentrator cells

Solar Energy Materials and Solar Cells, 2001
Masafumi Yamaguchi, Kenji Araki, Tatsuya Takamoto   +2 more
exaly  

?????????? ???????????????????? ???????????????????? ?????????????????? ?? ????????????????-???????????????????? ???????????? ???? ???????????????????????? ???????????????????? ?????????????????????? ?????????????????? GaAs

2008
We have investigated the real and chemically sulfided gallium arsenide surfaces by the electroreflectance method in the E0-spectral region. On the basis of quantitative analysis of the experimental data, the flat band potential, energies of quantized levels, width of a quantum well, and the intrinsic mechanical stresses depending on sulfiding ...
openaire   +1 more source

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

Journal of Synchrotron Radiation, 2015
Ullrich Pietsch, Philipp Schroth, Sergey Lazarev   +2 more
exaly