Results 261 to 270 of about 300,339 (303)
Some of the next articles are maybe not open access.
2013
???????????????????? ?????????? ?????????? ?????????????????? ?? ?????????????????????? ???? ?????????????????? ???????????????????????????? ??????????????, ?? ???????????????? ???? ???????????? ?????????????????????????? ???? ?????????????????? ?????????????????????? ???????????????????? ?????????????????? GaAs n-???????? ?? ?????????????? ????????????
+8 more sources
???????????????????? ?????????? ?????????? ?????????????????? ?? ?????????????????????? ???? ?????????????????? ???????????????????????????? ??????????????, ?? ???????????????? ???? ???????????? ?????????????????????????? ???? ?????????????????? ?????????????????????? ???????????????????? ?????????????????? GaAs n-???????? ?? ?????????????? ????????????
+8 more sources
2018
A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
openaire +4 more sources
A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
openaire +4 more sources
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
, 1985S. Adachi
semanticscholar +1 more source
2017
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
openaire +1 more source
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
openaire +1 more source
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
, 1996H. Ohno +6 more
semanticscholar +1 more source
2016
???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
openaire +1 more source
???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
openaire +1 more source
GaAs nanowire array solar cells with axial p-i-n junctions.
Nano letters (Print), 2014Maoqing Yao +9 more
semanticscholar +1 more source

