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Stoichiometry of GaAs nanodots on GaAs(001)
MRS Proceedings, 2015ABSTRACTWe present a strain-free, self-assembled GaAs nanodots on GaAs(001) surfaces. Nanodots are studied by atomic force microscopy and field emission scanning electron microscopy. Nanodots self-assemble on the GaAs surface when two laser pulses overlap on the surface interferentially.
Anahita Haghizadeh, Haeyeon Yang
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Spectroscopic constants and potential energy curves of GaAs, GaAs+, and GaAs−
Journal of Molecular Spectroscopy, 1990Abstract Twenty electronic states of GaAs, 12 electronic states of GaAs + , and 13 electronic states of GaAs − are investigated using relativistic ab initio complete active space MCSCF (CASSCF) followed by large-scale configuration interaction calculations which included up to 700 000 configurations.
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Lattice Mismatch Effects in GaAsP/GaAs and GaAs/GaAsP/GaAs Heterostructures
MRS Proceedings, 1989AbstractStructural and electrical characteristics of the GaAs1-xPx / GaAs and GaAs/GaAs1-xPx/GaAs (x=0.02, 0.05, 0.08, 0.16 and 0.32) hetero-epitaxial systems have been investigated using X-ray rocking curve technique, Optical Beam Induced Current imaging, Nomarski Micrograph, and I-V-T and C-V measurements. The rocking curve Full Width Half Maximum of
Y.W. Choi, C.R. Wie, S.M. Vernon
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Characterization of GaAs/Si/GaAs Heterostructures
Japanese Journal of Applied Physics, 1992GaAs/Si(n)/GaAs, n=1 to 3 mono-layers (ML) were grown on GaAs (100) substrates using molecular beam epitaxy. Double crystal X-ray diffraction rocking curve and Rutherford backscattering/chanelling studies indicated that 1 ML of Si grows coherently and psuedomorphicatly on GaAs and 2 and 3 ML Si exhibit increasing defect nature and are probably ...
T. Sudersena Rao +4 more
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2014
?????????????? ???????????????????? GaAs ?????????????? ????????????????????????, ?????????????????? ???????????????????????? ???????????????????????????? ???????????????? ??????????????, ?????????? ???????????????????????????????? ???? ???????????????????????? ?????????????????????????? ???????????????? ?????????????? ???? ?????????????? "????????????-
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?????????????? ???????????????????? GaAs ?????????????? ????????????????????????, ?????????????????? ???????????????????????? ???????????????????????????? ???????????????? ??????????????, ?????????? ???????????????????????????????? ???? ???????????????????????? ?????????????????????????? ???????????????? ?????????????? ???? ?????????????? "????????????-
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2017
The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
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The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values ??? which yield the diode maximum generation efficiency ??? for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurities, and the height of the potential barrier on ...
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2016
???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
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???? ???????????? ?????????????????????????????????? ???????????? ???????????????????????? ???????????????? ???????????????????? ?? GaAs ?????????????????????? ???????????????? ???????????????????????? ???????????? ?????????? ?? ???????????????????? ?????????????????? ???????????????????? ???? ?????????????????? ????????????????. ?????????????? ????????
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2018
A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
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A comparative study of the thermal conductivity in the temperature interval 2???300 K is carried out for single-crystal GaAs samples grown on Earth and grown under analogous conditions in microgravity on the manned space station Mir. It is found that the heat transfer in the samples is due to phonons.
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