Results 251 to 260 of about 300,339 (303)

Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctions

Journal of Vacuum Science and Technology, 1979
The band edge photoluminescence of GaAs structures has been studied as a function of greater than band edge excitation energies. For p–p–n, GaAlAs–GaAs–GaAs, and p–n GaAs solar cell structures, it was found that the photoluminescent response curves were similar to the short circuit current response curves. A computer simulation program was developed to
J. M. Woodall, G. D. Pettit, T. Chappell, H. J. Hovel   +3 more
openaire   +1 more source

EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS

Bulletin of the Lebedev Physics Institute, 2020
The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmosphere.
I. P. Kazakov, S. A. Zinov’ev, A. V. Klekovkin, V. A. Sazonov, V. N. Kukin, N. I. Borgardt   +5 more
openaire   +1 more source

Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance

SPIE Proceedings, 2000
GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thicknesses were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase ...
M. E. Constantino, B. Salazar-Hernandez
openaire   +1 more source

Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).

MRS Proceedings, 1991
ABSTRACTThe growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity.
M. Lopez, Y. Takano, K. Pak, H. Yonezu
openaire   +1 more source

Electronic states of GaAs and GaAs+

The Journal of Chemical Physics, 1987
Complete active space MCSCF (CASSCF) followed by first-order configuration interaction (FOCI) calculations are carried out on low-lying electronic states of GaAs and GaAs+. Among the 12 electronic states of GaAs considered here, six of them are bound and their spectroscopic properties are calculated.
openaire   +1 more source

Lattice Mismatch Effects in GaAsP/GaAs and GaAs/GaAsP/GaAs Heterostructures

MRS Proceedings, 1989
AbstractStructural and electrical characteristics of the GaAs1-xPx / GaAs and GaAs/GaAs1-xPx/GaAs (x=0.02, 0.05, 0.08, 0.16 and 0.32) hetero-epitaxial systems have been investigated using X-ray rocking curve technique, Optical Beam Induced Current imaging, Nomarski Micrograph, and I-V-T and C-V measurements. The rocking curve Full Width Half Maximum of
Y.W. Choi, C.R. Wie, S.M. Vernon
openaire   +1 more source

Spectroscopic constants and potential energy curves of GaAs, GaAs+, and GaAs−

Journal of Molecular Spectroscopy, 1990
Abstract Twenty electronic states of GaAs, 12 electronic states of GaAs + , and 13 electronic states of GaAs − are investigated using relativistic ab initio complete active space MCSCF (CASSCF) followed by large-scale configuration interaction calculations which included up to 700 000 configurations.
openaire   +1 more source

Photoreflectance of GaAs/SI-GaAs interface

Physica Status Solidi (a), 1993
Photoreflectance spectra of doped molecular-beam-epitaxy GaAs films grown on semi-insulating GaAs substrate, modulated by different pump beams, are studied. From the interference effect of two light beams reflected from different interfaces of a sample, the PR signals from the surface of the MBE film and that from the interface of film and substrate ...
Zhonghe Wang, Shihong Pan, Shanming Mu
openaire   +1 more source

Characterization of GaAs/Si/GaAs Heterostructures

Japanese Journal of Applied Physics, 1992
GaAs/Si(n)/GaAs, n=1 to 3 mono-layers (ML) were grown on GaAs (100) substrates using molecular beam epitaxy. Double crystal X-ray diffraction rocking curve and Rutherford backscattering/chanelling studies indicated that 1 ML of Si grows coherently and psuedomorphicatly on GaAs and 2 and 3 ML Si exhibit increasing defect nature and are probably ...
T. Sudersena Rao, Yoshiji Horikoshi, C. Jagadish, R. G. Elliman, J. S. Williams   +4 more
openaire   +1 more source

???????????????? ???????????????????????? ?????? ???????????????????????? ???????????????????????????????? GaAs ?????????????? ????????????????????????

2014
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  +14 more sources