Results 231 to 240 of about 133,403 (291)
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Photoreflectance from GaAs and GaAs/GaAs interfaces
Physical Review B, 1989Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K.
, Sydor +4 more
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Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs
Journal of Physics D: Applied Physics, 1999GaAs at interfaces of molecular beam epitaxy (MBE) grown ZnSe/GaAs/GaAs films with ZnSe layers of different thicknesses is studied by photoreflectance (PR) spectroscopy. We can separate two different near-band-edge optical features originating from two different regions of the heterostructure by using in-phase and out-phase PR measurements as well as ...
M E Constantino +6 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998
Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs are reported. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01%. Both DyP and DyAs have been grown by solid source molecular beam epitaxy.
P. P. Lee +9 more
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Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs are reported. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01%. Both DyP and DyAs have been grown by solid source molecular beam epitaxy.
P. P. Lee +9 more
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Materials Science and Engineering: B, 1993
As-grown (σ-conductive) and annealed (semi-insulating (SI)) low temperature (LT) double layers have been analysed by conductivity profiling. The σ-LTGaAs/GaAs junction represents an NT+/GaAs junction with no noticeable depletion effects in the σ-LTGaAs.
K.M Lipka +5 more
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As-grown (σ-conductive) and annealed (semi-insulating (SI)) low temperature (LT) double layers have been analysed by conductivity profiling. The σ-LTGaAs/GaAs junction represents an NT+/GaAs junction with no noticeable depletion effects in the σ-LTGaAs.
K.M Lipka +5 more
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Characterization of ErAs/GaAs and GaAs/ErAs/GaAs Structures
MRS Proceedings, 1989AbstractA series of ErAs/GaAs and GaAs/ErAs/GaAs epilayers have been grown on (100) GaAs substrates by molecular-beam epitaxy. Misfit dislocations at the ErAs/GaAs interface have been analyzed using the weak-beam technique of transmission electron microscopy.
Jane G. Zhu +3 more
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Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures
Journal of Electronic Materials, 1998There is a significant interest in the area of improving high temperature stable contacts to III-V semiconductors. Two attractive material systems that offer promise in this area are dysprosium phosphide/gallium arsenide (DyP/GaAs) and dysprosium arsenide/gallium arsenide (DyAs/GaAs).
P. P. Lee +7 more
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Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
Journal of Crystal Growth, 2007Abstract GaAs/In x Ga 1− x As/GaAs heterostructures nanowires were grown by metal-organic vapor-phase epitaxy on (1 1 1)B GaAs substrate using the vapor–liquid–solid growth mode. The diameter of the nanowires was defined by monodisperse gold nanoparticles deposited on the GaAs substrate.
Regolin, Ingo +9 more
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Physical Review Letters, 1988
Experimental measurements of structure factors in GaAs have been compared with the results of ab initio calculations by the pseudopotential method. We measure the charge in the bond from charge-density maps to be 0.071 electron, in good agreement with theory.
, Zuo, , Spence, , O'Keeffe
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Experimental measurements of structure factors in GaAs have been compared with the results of ab initio calculations by the pseudopotential method. We measure the charge in the bond from charge-density maps to be 0.071 electron, in good agreement with theory.
, Zuo, , Spence, , O'Keeffe
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Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs
Semiconductor Science and Technology, 2014Engineered or 'virtual' substrates are of interest to extend the range of epitaxially-grown semiconductor heterostructures available for device applications. To this end, elastically strain-relaxed square features up to 30 µm in size and having an in-plane lattice constant as much as 0.49% larger than the lattice constant of GaAs were fabricated from ...
P M Mooney +7 more
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