Results 231 to 240 of about 300,339 (303)

Quantitative Model of Internal Analyzer Scattering in a Hemispherical Electron Analyzer and Its Application to Improve the Accuracy of the Transmission Function

Surface and Interface Analysis, Volume 58, Issue 7, Page 456-470, July 2026.
ABSTRACT Internal scattering within hemispherical electron analyzers (HEA) is common when operating at low pass energies, where the instrument resolution of X‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy experiments are at their best.
J. Laverock, N. A. Fox
wiley   +1 more source

Evaluating putative lncRNA‐mediated ceRNA regulatory network involving miR396 and miR319 in maize leaf growth under Fusarium verticillioides infection

Annals of Applied Biology, Volume 189, Issue 1, July 2026.
The final leaf length of maize (Zea mays) was reduced due to the pathogenic fungus Fusarium verticillioides infection as a result of increased expression of miR396 in the elongation zone and decreased expression of miR319 in the mature zone of maize leaves, leading to antagonistic regulation of the expression of the GRF15 and TCP38, respectively ...
Erdem Emre Deligoz, Fatma Aydinoglu
wiley   +1 more source

Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

, 1989
Yanakura, E., Mizuta, Hiroshi, Hiruma, K., Mori, M., Takahashi, S.   +4 more
core  

What Is Your Diagnosis? Esophageal and Gastric Washes in a Pet Moellendorff's Rat Snake

Veterinary Clinical Pathology, EarlyView.
Lina C. Bilhalva, Priscila B. S. Serpa, Natalia J. Strandberg, Sriveny Dangoudoubiyam, Craig A. Thompson, Andrea P. Santos   +5 more
wiley   +1 more source

GaAs

Oyo Buturi, 1966
openaire   +1 more source

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Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron–Hole Tube Structure

Nano Letters, 2020
Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the Ⅰ-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT)
Fengyuan Lin, Xue Chen, Hao Huang
exaly   +2 more sources

Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

Nano Letters, 2015
P A Alekseev, M S Dunaevskiy, A V Nezhdanov   +2 more
exaly   +2 more sources

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Advanced Functional Materials, 2014
Shamsul Arafin, Darshana Wickramaratne, M A Zurbuchen   +2 more
exaly   +2 more sources

Photoreflectance from GaAs and GaAs/GaAs interfaces

Physical Review B, 1989
Photoreflectance from semi-insulating GaAs, and GaAs/GaAs interfaces, is discussed in terms of its behavior with temperature, doping, epilayer thickness, and laser intensity. Semi-insulating substrates show an exciton-related band-edge signal below 200 K and an impurity-related photoreflectance above 400 K.
, Sydor, , Angelo, , Wilson, , Mitchel, , Yen   +4 more
openaire   +2 more sources

Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs

Journal of Physics D: Applied Physics, 1999
GaAs at interfaces of molecular beam epitaxy (MBE) grown ZnSe/GaAs/GaAs films with ZnSe layers of different thicknesses is studied by photoreflectance (PR) spectroscopy. We can separate two different near-band-edge optical features originating from two different regions of the heterostructure by using in-phase and out-phase PR measurements as well as ...
M E Constantino, H Navarro-Contreras, M A Vidal, B Salazar-Hernandez, A Lastras-Martinez, I Hernandez-Calderon, M Lopez-Lopez   +6 more
openaire   +1 more source