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Prepared for GaAs PHEMT Material
Advanced Materials Research, 2012In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
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A 3.5GHz GaAs pHEMT Power Amplifier
2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu +3 more
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GaAs MMIC pHEMT gate metal thermometry
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias.
Bryan K. Schwitter +4 more
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K-Band monolithic GaAs PHEMT amplifiers
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2000This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-/spl mu/m gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry.
Lin, Kun-You +5 more
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Characterisation of GaAs pHEMT Transient Thermal Response
2018 13th European Microwave Integrated Circuits Conference (EuMIC), 2018Transient gate resistance thermometry is employed to characterise the time domain response of a GaAs pHEMT under pulsed conditions. Self heating is observed from hundreds of nanoseconds to hundreds of milliseconds. A TFR-heated test structure is used to develop a 3-D finite-element thermal model that scales with power density and gate periphery ...
Bryan K. Schwitter +3 more
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AlGaAs/InGaAs/GaAs heterostructures based pHEMT
12th International Conference Microwave and Telecommunication Technology, 2002The results of developing a pHEMT on AlGaAs/InGaAs heterostructures grown on a GaAs substrate are presented. The structures have electron mobility of 6400 cm/sup 2//(V/spl middot/s) and surface electron density of 1.2/spl times/10/sup 12/ cm/sup -2/ at room temperature.
N.A. Maleev +5 more
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Drain Corrosion in RF Power GaAs PHEMTs
2007 IEEE International Electron Devices Meeting, 2007We have investigated drain degradation in a set of experimental RF power GaAs PHEMTs. Drain degradation was observed in the form of an increase in RD and a reduction in Imax in a variety of conditions. We found that both forms of degradation arise from surface corrosion that takes place on different locations on the drain and dominate in different ...
A. Villanueva +3 more
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Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT
physica status solidi c, 2006We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail +4 more
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