Results 191 to 200 of about 2,410 (220)

A 5.25GHz GaAs PHEMT power amplifier for 802.11a application

2010 International Conference on Microwave and Millimeter Wave Technology, 2010
A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P 1dB ), small signal gain of 25 ...
Yanjun Peng, K. F. Tsang, Ling Sun, Huaxiang Lu, Yanjin Li, Weiping Jing   +5 more
openaire   +1 more source

Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs

IEEE Electron Device Letters, 2004
The Ti metal interdiffusion of Ti/Pt/Au gate metal stacks in 0.15-/spl mu/m GaAs PHEMTs subjected to high-temperature accelerated lifetest has been physically identified using scanning transmission electron microscopy. Further energy dispersive analysis with X-ray (EDX) analysis confirms the Ti diffusion into the AlGaAs Schottky barrier layer and the ...
Y.C. Chou, R. Grundbacher, D. Leung, R. Lai, P.H. Liu, Q. Kan, M. Biedenbender, M. Wojtowicz, D. Eng, A. Oki   +9 more
openaire   +1 more source

Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks.
openaire   +1 more source

Accurate Small-Signal Model Extraction for pHEMT on GaAs

International Journal of Infrared and Millimeter Waves, 2007
An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by
Lei Wang, Rui-Min Xu, Bo Yan
openaire   +1 more source

Mismatch Based Implementation of W Band LNA Using GaAs pHEMTs

2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
Ultra-low noise W Band amplifier has been implemented using 0.1um GaAs pHEMT technology. Four stages common source degeneration topology has been used to achieve less noise figure and stability. The bias network is designed to ensure stability from DC to 120 GHz.
Sharma S. S., Sharma S., Longhi P., Colangeli S., Ciccognani W., Limiti E.   +5 more
openaire   +2 more sources

GaAs pHEMT Damage under High Power MMW Injection

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022
Mingwen Zhang, Chunguang Ma, Yuanci Gao, Yong Luo   +3 more
openaire   +1 more source

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

Electronics (Switzerland), 2021
Igor Dobush, Ivan S Vasil'evskii, Dmitry S Bragin   +2 more
exaly  

A Low Insertion Loss Variation Trombone True Time Delay in GaAs pHEMT Monolithic Microwave Integrated Circuit

IEEE Microwave and Wireless Components Letters, 2021
Dongning Hao, Wei Zhang, Xiubo Liu
exaly  

Design and Analysis of a Cascode Distributed LNA With Gain and Noise Improvement in 0.15-μm GaAs pHEMT Technology

IEEE Transactions on Circuits and Systems II: Express Briefs, 2022
Xu Yan, Haorui Luo, Jingyuan Zhang
exaly  

Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit

Physica E: Low-Dimensional Systems and Nanostructures, 2021
Aleksey Klochkov, Yuriy D Sibirmovsky, Ivan S Vasil'evskii   +2 more
exaly