Results 181 to 190 of about 122,511 (209)
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The temperature dependency of a GaAs pHEMT wideband IQ modulator IC
Proceedings. 2004 IEEE Radio and Wireless Conference (IEEE Cat. No.04TH8746), 2005The author developed a GaAs wideband IQ modulator IC, which is utilized in Agilent RF signal source instruments. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift performance is poorer in some frequency ranges than the first generation of IC which has the same architecture. This paper presents
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Integration of RF MEMS switches with pHEMT MMICs on GaAs
2011 Defense Science Research Conference and Expo (DSR), 2011Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches are highly linear, low loss, inherently broadband with low power consumption. Given its nearly ideal technical switching specifications, highly complex, agile switching circuits using RF MEMS will be possible.
H. Wang +4 more
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Physical Identification of Gate Metal Interdiffusion in GaAs PHEMTs
IEEE Electron Device Letters, 2004The Ti metal interdiffusion of Ti/Pt/Au gate metal stacks in 0.15-/spl mu/m GaAs PHEMTs subjected to high-temperature accelerated lifetest has been physically identified using scanning transmission electron microscopy. Further energy dispersive analysis with X-ray (EDX) analysis confirms the Ti diffusion into the AlGaAs Schottky barrier layer and the ...
Y.C. Chou +9 more
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Off-State Breakdown of GaAs PHEMTs: Review and New Data
IEEE Transactions on Device and Materials Reliability, 2004This paper reviews the literature dealing with off-state gate-drain breakdown in MESFET and HEMT structures, with particular emphasis on GaAs PHEMTs, in terms of: 1) the physics of the breakdown phenomenon; 2) the breakdown walkout effect; 3) the impact of design and process choices on the breakdown behavior; and 4) the experimental techniques used for
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A 5.25GHz GaAs PHEMT power amplifier for 802.11a application
2010 International Conference on Microwave and Millimeter Wave Technology, 2010A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P 1dB ), small signal gain of 25 ...
Yanjun Peng +5 more
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A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application
International Journal of Circuit Theory and ApplicationsABSTRACTCompared to silicon‐based complementary metal oxide semiconductor (CMOS), second‐generation semiconductor materials, such as gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), offer significant advantages for radio frequency (RF) applications.
Tingwei Gong +6 more
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Reliability of GaAs PHEMT under hydrogen containing atmosphere
Proceedings of 1994 IEEE GaAs IC Symposium, 2005Degradation of PHEMTs by hydrogen was verified by DC life tests in the hermetic packages and in the forming gases containing different hydrogen concentrations. We have found that a hydrogen partial pressure in the order of 2 torr will cause Ids change by 20% in about 800 hours at 125/spl deg/C and about 300 hours at 150/spl deg/C.
W.W. Hu +4 more
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Electrical degradation mechanisms of RF power GaAs PHEMTs.
2007GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete ...
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Electrical reliability of RF power GaAs PHEMTs
2003Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003. ; Includes bibliographical references (p. 81-82). ; by Anita A. Villanueva. ; S.M.
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Design of X-band SPDT in a GaAs pHEMT Process
2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2022Wei Zheng +5 more
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