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GaAs pHEMT MMIC of the ultra broadband amplifier
2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010There is an example of ultra broadband amplifier MMIC design based on GaAs pHEMT process. Operating frequency band is 1–4 GHz, gain is 18 dB, noise factor is lesser 2.6 dB, input/output reflection factor is less − 15 dB, unipolar power is + 5 V, consumption current is 50 mA, chip dimension is 2.5 × 1.5 × 0.1 mm.
A. A. Barov, A. V. Kondratenko
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Temperature, Humidity, and Bias Acceleration Model for a GaAs pHEMT Process
Microelectronics Reliability, 2015Abstract This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process.
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K-Band monolithic GaAs PHEMT amplifiers
2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2000This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-/spl mu/m gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry.
Lin, Kun-You +5 more
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A Ku-Band Compact MMIC PA Based on Stacked GaAs pHEMT Cells
, 2018 In this paper, a stacked MMIC power amplifier in GaAs pHEMT technology is designed for Ku-band operation. The amplifier exploits series power combination among three transistor stages, thus benefiting from the reduced output impedance transformation ...
Anna Piacibello +2 more
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Drain Corrosion in RF Power GaAs PHEMTs
2007 IEEE International Electron Devices Meeting, 2007We have investigated drain degradation in a set of experimental RF power GaAs PHEMTs. Drain degradation was observed in the form of an increase in RD and a reduction in Imax in a variety of conditions. We found that both forms of degradation arise from surface corrosion that takes place on different locations on the drain and dominate in different ...
A. Villanueva +3 more
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Source-pull noise characterization of GaAs pHEMTs
2012 19th International Conference on Microwaves, Radar & Wireless Communications, 2012The paper presents results of the four noise parameter measurement of GaAs pseudomorflc high electron mobility transistors (pHEMTs) in the frequency range 0.8–8 GHz. The parameters were determined using an own complex noise characterization method based on the eigth-term linear noise model.
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150 GHz GaAs amplifiers in a commercial 0.1-μm GaAs PHEMT process
2016 11th European Microwave Integrated Circuits Conference (EuMIC), 2016150 GHz amplifiers fabricated on a commercial GaAs process with an f T of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a bandwidth of 100 to 150 GHz and output power above 8 dBm at 140 GHz.
Alex Bessemoulin +4 more
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A 1.4 watt Q-band GaAs PHEMT MMIC
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 2002A Q-band three-stage monolithic GaAs PHEMT amplifier with an output power of 1.4 W from 42 to 45 GHz has been developed. Power added efficiency between 14 and 18% with an associated gain of 12.5 dB was measured when biased at Vds=6.0 V and Idsq=1000 mA.
S.J. Nash +3 more
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Low cost GaAs PHEMT MMICs for millimeter-wave sensor applications
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192), 1998A chip set for millimeter-wave sensor applications, especially automotive radar systems, is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer and a medium power amplifier. The MMICs operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs PHEMT ...
H.J. Siweris +9 more
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Oxidation control of GaAs pHEMTs for high efficiency applications
IEEE Electron Device Letters, 2002In this letter, for the first time, an investigation of partially oxidized GaAs-on-insulator (GOI) AlGaAs/InGaAs/GaAs pseudomorphic HEMTs is reported. Fully oxidized pHEMTs demonstrated minimized substrate leakage current and high output impedance, but suffered from 30/spl sim/40% charge loss. Fully oxidized devices also showed transconductance peaking
null Can Zheng +4 more
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